Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure

Junmo Kang, Itamar Balla, Xiaolong Liu, Hadallia Bergeron, Soo Kim, Christopher Wolverton, Mark C Hersam

Research output: Contribution to journalArticle

Abstract

Large-scale synthesis of high-quality two-dimensional (2D) semiconductors is critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition-metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS2) from CVD-grown MoS2-EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS2 onto SiO2/Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS2 shows high performance in field-effect transistors with mobilities of up to 30 cm2/V s and on/off ratios of up to 106 at room temperature. This transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.

Original languageEnglish
Pages (from-to)8495-8500
Number of pages6
JournalChemistry of Materials
Volume30
Issue number23
DOIs
Publication statusPublished - Dec 11 2018

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Graphene
Transition metals
Heterojunctions
Optoelectronic devices
Chemical vapor deposition
Monolayers
Substrates
Adhesion
Nanoelectronics
Field effect transistors
Epitaxial growth
Electronic properties
Photonics
Oxides
Molybdenum
Density functional theory
Copper
Atomic force microscopy
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure. / Kang, Junmo; Balla, Itamar; Liu, Xiaolong; Bergeron, Hadallia; Kim, Soo; Wolverton, Christopher; Hersam, Mark C.

In: Chemistry of Materials, Vol. 30, No. 23, 11.12.2018, p. 8495-8500.

Research output: Contribution to journalArticle

Kang, Junmo ; Balla, Itamar ; Liu, Xiaolong ; Bergeron, Hadallia ; Kim, Soo ; Wolverton, Christopher ; Hersam, Mark C. / Selective Transfer of Rotationally Commensurate MoS2 from an Epitaxially Grown van der Waals Heterostructure. In: Chemistry of Materials. 2018 ; Vol. 30, No. 23. pp. 8495-8500.
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