Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic

Woo Jin Hyun, Ethan B. Secor, Fazel Zare Bidoky, S. Brett Walker, Jennifer A. Lewis, Mark C Hersam, Lorraine F. Francis, C. Daniel Frisbie

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Top-gate thin-film transistors (TFTs) are fabricated on plastic using a self-aligned method based on capillarity-assisted lithography and inkjet printing, offering a promising platform for high-throughput manufacturing of flexible electronic devices. Plastic substrates are imprinted with a multi-tier structure containing capillary channels and ink receivers using a precision mold. Liquid inks are sequentially delivered to the microstructured substrate by inkjet printing, and capillary action draws the inks into a multi-tier capillary channel network designed for top-gate TFTs. The combination of imprinting, inkjet printing, and capillary flow yields self-aligned multi-layered devices without requiring precise registration for inkjet printing. The printed top-gate TFTs with Ag/Cu source and drain, poly(3-hexylthiophene) semiconducting channel, ion gel dielectric, and graphene gate electrode have desirable transfer and output characteristics, with a hole mobility of 0.48 cm2 V-1 s-1, threshold voltage of -0.86 V, on/off current ratio of 104.5, and robust tolerance to bending. The top-gate geometry and careful materials selection yields devices with negligible hysteresis and sweep rate dependence, establishing the versatility and utility of this self-aligned strategy for more widespread application in printed and flexible electronics.

Original languageEnglish
Article number035004
JournalFlexible and Printed Electronics
Volume3
Issue number3
DOIs
Publication statusPublished - Sep 1 2018

Fingerprint

Gates (transistor)
Capillarity
Thin film transistors
Printing
Ink
Plastics
Flexible electronics
Capillary flow
Hole mobility
Graphite
Substrates
Threshold voltage
Ion Channels
Graphene
Lithography
Hysteresis
Gels
Throughput
Electrodes
Geometry

Keywords

  • capillarity-assisted lithography
  • flexible electronics
  • inkjet printing
  • thin-film transistor
  • top-gate structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hyun, W. J., Secor, E. B., Zare Bidoky, F., Walker, S. B., Lewis, J. A., Hersam, M. C., ... Frisbie, C. D. (2018). Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic. Flexible and Printed Electronics, 3(3), [035004]. https://doi.org/10.1088/2058-8585/aad476

Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic. / Hyun, Woo Jin; Secor, Ethan B.; Zare Bidoky, Fazel; Walker, S. Brett; Lewis, Jennifer A.; Hersam, Mark C; Francis, Lorraine F.; Frisbie, C. Daniel.

In: Flexible and Printed Electronics, Vol. 3, No. 3, 035004, 01.09.2018.

Research output: Contribution to journalArticle

Hyun, WJ, Secor, EB, Zare Bidoky, F, Walker, SB, Lewis, JA, Hersam, MC, Francis, LF & Frisbie, CD 2018, 'Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic', Flexible and Printed Electronics, vol. 3, no. 3, 035004. https://doi.org/10.1088/2058-8585/aad476
Hyun, Woo Jin ; Secor, Ethan B. ; Zare Bidoky, Fazel ; Walker, S. Brett ; Lewis, Jennifer A. ; Hersam, Mark C ; Francis, Lorraine F. ; Frisbie, C. Daniel. / Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic. In: Flexible and Printed Electronics. 2018 ; Vol. 3, No. 3.
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