Abstract
We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed with respect to an individual nanotube with a spacing of less than 10 nm. The suspended multi-walled carbon nanotube (MWCNT) is used as an evaporation mask during metal deposition. The metal forms an island on the nanotube, with increasing width as the metal is deposited, forming a wedge shape, so that even thick deposited layers yield islands that remain separated from the metal deposited on the substrate due to shadowing of the evaporation. The island can be removed during lift-off to leave a set of self-aligned electrodes on the substrate. Results show that Cr yields self-aligned side gates with around 90% effectiveness.
| Original language | English |
|---|---|
| Pages (from-to) | 615-622 |
| Number of pages | 8 |
| Journal | Microelectronic Engineering |
| Volume | 67-68 |
| DOIs | |
| Publication status | Published - Jun 2003 |
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Keywords
- Oxidised silicon substrate
- Self-aligned electrodes
- Suspended multi-walled carbon nanotube
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Self-aligned electrodes for suspended carbon nanotube structures. / Robinson, L. A W; Lee, S. B.; Teo, K. B K; Chhowalla, M.; Amaratunga, G. A J; Milne, W. I.; Williams, D. A.; Hasko, D. G.; Ahmed, H.
In: Microelectronic Engineering, Vol. 67-68, 06.2003, p. 615-622.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Self-aligned electrodes for suspended carbon nanotube structures
AU - Robinson, L. A W
AU - Lee, S. B.
AU - Teo, K. B K
AU - Chhowalla, M.
AU - Amaratunga, G. A J
AU - Milne, W. I.
AU - Williams, D. A.
AU - Hasko, D. G.
AU - Ahmed, H.
PY - 2003/6
Y1 - 2003/6
N2 - We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed with respect to an individual nanotube with a spacing of less than 10 nm. The suspended multi-walled carbon nanotube (MWCNT) is used as an evaporation mask during metal deposition. The metal forms an island on the nanotube, with increasing width as the metal is deposited, forming a wedge shape, so that even thick deposited layers yield islands that remain separated from the metal deposited on the substrate due to shadowing of the evaporation. The island can be removed during lift-off to leave a set of self-aligned electrodes on the substrate. Results show that Cr yields self-aligned side gates with around 90% effectiveness.
AB - We report on a study into electrode fabrication for the gate control of carbon nanotubes partially suspended above an oxidised silicon substrate. A fabrication technique has been developed that allows self-aligned side-gate electrodes to be placed with respect to an individual nanotube with a spacing of less than 10 nm. The suspended multi-walled carbon nanotube (MWCNT) is used as an evaporation mask during metal deposition. The metal forms an island on the nanotube, with increasing width as the metal is deposited, forming a wedge shape, so that even thick deposited layers yield islands that remain separated from the metal deposited on the substrate due to shadowing of the evaporation. The island can be removed during lift-off to leave a set of self-aligned electrodes on the substrate. Results show that Cr yields self-aligned side gates with around 90% effectiveness.
KW - Oxidised silicon substrate
KW - Self-aligned electrodes
KW - Suspended multi-walled carbon nanotube
UR - http://www.scopus.com/inward/record.url?scp=0038020126&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038020126&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(03)00122-9
DO - 10.1016/S0167-9317(03)00122-9
M3 - Article
VL - 67-68
SP - 615
EP - 622
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -