Abstract
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
| Original language | English |
|---|---|
| Pages (from-to) | 1421-1427 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Feb 14 2018 |
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Keywords
- 2D material
- antiambipolar
- Self-aligned
- source-gated transistor
- van der Waals heterojunction
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
Cite this
Self-Aligned van der Waals Heterojunction Diodes and Transistors. / Sangwan, Vinod K.; Beck, Megan E.; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J.; Hersam, Mark C.
In: Nano Letters, Vol. 18, No. 2, 14.02.2018, p. 1421-1427.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Self-Aligned van der Waals Heterojunction Diodes and Transistors
AU - Sangwan, Vinod K.
AU - Beck, Megan E.
AU - Henning, Alex
AU - Luo, Jiajia
AU - Bergeron, Hadallia
AU - Kang, Junmo
AU - Balla, Itamar
AU - Inbar, Hadass
AU - Lauhon, Lincoln J.
AU - Hersam, Mark C
PY - 2018/2/14
Y1 - 2018/2/14
N2 - A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
AB - A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
KW - 2D material
KW - antiambipolar
KW - Self-aligned
KW - source-gated transistor
KW - van der Waals heterojunction
UR - http://www.scopus.com/inward/record.url?scp=85042097560&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85042097560&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.7b05177
DO - 10.1021/acs.nanolett.7b05177
M3 - Article
C2 - 29385342
AN - SCOPUS:85042097560
VL - 18
SP - 1421
EP - 1427
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -