Self-Aligned van der Waals Heterojunction Diodes and Transistors

Vinod K. Sangwan, Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Original languageEnglish
Pages (from-to)1421-1427
Number of pages7
JournalNano Letters
Volume18
Issue number2
DOIs
Publication statusPublished - Feb 14 2018

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Keywords

  • 2D material
  • antiambipolar
  • Self-aligned
  • source-gated transistor
  • van der Waals heterojunction

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Sangwan, V. K., Beck, M. E., Henning, A., Luo, J., Bergeron, H., Kang, J., Balla, I., Inbar, H., Lauhon, L. J., & Hersam, M. C. (2018). Self-Aligned van der Waals Heterojunction Diodes and Transistors. Nano Letters, 18(2), 1421-1427. https://doi.org/10.1021/acs.nanolett.7b05177