Self-Aligned van der Waals Heterojunction Diodes and Transistors

Vinod K. Sangwan, Megan E. Beck, Alex Henning, Jiajia Luo, Hadallia Bergeron, Junmo Kang, Itamar Balla, Hadass Inbar, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Original languageEnglish
Pages (from-to)1421-1427
Number of pages7
JournalNano Letters
Volume18
Issue number2
DOIs
Publication statusPublished - Feb 14 2018

Fingerprint

Heterojunctions
heterojunctions
Transistors
Diodes
transistors
diodes
self alignment
Fabrication
fabrication
heterojunction devices
homojunctions
n-type semiconductors
Semiconducting organic compounds
Geometry
organic semiconductors
Photolithography
versatility
photolithography
geometry
Scalability

Keywords

  • 2D material
  • antiambipolar
  • Self-aligned
  • source-gated transistor
  • van der Waals heterojunction

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Sangwan, V. K., Beck, M. E., Henning, A., Luo, J., Bergeron, H., Kang, J., ... Hersam, M. C. (2018). Self-Aligned van der Waals Heterojunction Diodes and Transistors. Nano Letters, 18(2), 1421-1427. https://doi.org/10.1021/acs.nanolett.7b05177

Self-Aligned van der Waals Heterojunction Diodes and Transistors. / Sangwan, Vinod K.; Beck, Megan E.; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J.; Hersam, Mark C.

In: Nano Letters, Vol. 18, No. 2, 14.02.2018, p. 1421-1427.

Research output: Contribution to journalArticle

Sangwan, VK, Beck, ME, Henning, A, Luo, J, Bergeron, H, Kang, J, Balla, I, Inbar, H, Lauhon, LJ & Hersam, MC 2018, 'Self-Aligned van der Waals Heterojunction Diodes and Transistors', Nano Letters, vol. 18, no. 2, pp. 1421-1427. https://doi.org/10.1021/acs.nanolett.7b05177
Sangwan VK, Beck ME, Henning A, Luo J, Bergeron H, Kang J et al. Self-Aligned van der Waals Heterojunction Diodes and Transistors. Nano Letters. 2018 Feb 14;18(2):1421-1427. https://doi.org/10.1021/acs.nanolett.7b05177
Sangwan, Vinod K. ; Beck, Megan E. ; Henning, Alex ; Luo, Jiajia ; Bergeron, Hadallia ; Kang, Junmo ; Balla, Itamar ; Inbar, Hadass ; Lauhon, Lincoln J. ; Hersam, Mark C. / Self-Aligned van der Waals Heterojunction Diodes and Transistors. In: Nano Letters. 2018 ; Vol. 18, No. 2. pp. 1421-1427.
@article{f652864bb5424f67a1b070b31e811cc9,
title = "Self-Aligned van der Waals Heterojunction Diodes and Transistors",
abstract = "A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.",
keywords = "2D material, antiambipolar, Self-aligned, source-gated transistor, van der Waals heterojunction",
author = "Sangwan, {Vinod K.} and Beck, {Megan E.} and Alex Henning and Jiajia Luo and Hadallia Bergeron and Junmo Kang and Itamar Balla and Hadass Inbar and Lauhon, {Lincoln J.} and Hersam, {Mark C}",
year = "2018",
month = "2",
day = "14",
doi = "10.1021/acs.nanolett.7b05177",
language = "English",
volume = "18",
pages = "1421--1427",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Self-Aligned van der Waals Heterojunction Diodes and Transistors

AU - Sangwan, Vinod K.

AU - Beck, Megan E.

AU - Henning, Alex

AU - Luo, Jiajia

AU - Bergeron, Hadallia

AU - Kang, Junmo

AU - Balla, Itamar

AU - Inbar, Hadass

AU - Lauhon, Lincoln J.

AU - Hersam, Mark C

PY - 2018/2/14

Y1 - 2018/2/14

N2 - A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

AB - A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

KW - 2D material

KW - antiambipolar

KW - Self-aligned

KW - source-gated transistor

KW - van der Waals heterojunction

UR - http://www.scopus.com/inward/record.url?scp=85042097560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042097560&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b05177

DO - 10.1021/acs.nanolett.7b05177

M3 - Article

VL - 18

SP - 1421

EP - 1427

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -