Solution-processed polymer-based logic circuits are typically associated with high operating voltage and slow switching speeds. Here, polymer field-effect transistors (PFETs) fabricated on hybrid self-assembled nanodielectric (SAND) structures are reported, the latter consisting of alternating organic–inorganic layers exhibiting low leakage current (≈10−9 A cm−2) and high capacitance (≈0.8 μF cm−2). Suitable device engineering, controllable dielectric parameters, and interface energetics enable PFET operation at ±1 V, field-effect mobility (μ FET) > 2.0 cm2 V−1 s−1, subthreshold swing ≈100 mV dec−1, and switching response ≈150 ns. These performance parameters are orders of magnitude higher than similar devices fabricated from other polymer dielectrics. Inverter and NAND logic circuits fabricated from these SAND-based PFETs possess voltage gain up to 38 and maximum-frequency bandwidth of 2 MHz. A systematic study comparing different classes of dielectric and semiconducting material attributes the enhanced performance to improved relaxation dynamics of the SAND layer and tunable chemically functionalized interfaces.
- 1 V transistors
- nanosecond switching
- polymer logic circuits
- self-assembled nanodielectrics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials