Self-consistent linearized-augmented-plane-wave-method determination of electronic structure and surface states on Al(111)

Ding Sheng Wang, Arthur J Freeman, H. Krakauer, M. Posternak

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Abstract

The self-consistent linearized-augmented-plane-wave method of Krakauer, Posternak, and Freeman for treating the electronic structure of thin films has been generalized to treat (111) films of cubic crystals and applied to the determination of the electronic structure and surface states of a nine-layer Al(111) film. Results presented include a work function in good agreement with experiment, layered projected density of states, layer by layer integrated charge densities, film normal direction planar charge densities, and surface-state charge densities. We find surface states at K» (found earlier in a pseudopotential study by Chelikowsky et al.) and another set near 3/4 "»M» in very good agreement with the position and the k» dispersion observed in the photoemission experiments of Hansson and Flodstrom.

Original languageEnglish
Pages (from-to)1685-1691
Number of pages7
JournalPhysical Review B
Volume23
Issue number4
DOIs
Publication statusPublished - 1981

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Surface states
Charge density
Electronic structure
plane waves
electronic structure
Photoemission
Experiments
pseudopotentials
Thin films
Crystals
photoelectric emission
thin films
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Self-consistent linearized-augmented-plane-wave-method determination of electronic structure and surface states on Al(111). / Wang, Ding Sheng; Freeman, Arthur J; Krakauer, H.; Posternak, M.

In: Physical Review B, Vol. 23, No. 4, 1981, p. 1685-1691.

Research output: Contribution to journalArticle

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