Self-patterned nanocrystals in Zn-In-Sn-O thin films

M. Zhang, D. B. Buchholz, S. J. Xie, Robert P. H. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Self-patterned nanocrystals (NCs) with size, shape and composition fluctuation similar to quantum dots (QDs) in conventional semiconductors were formed in epitaxial Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films on (1 1 1) yttria-stabilized zirconia (YSZ) substrate. The diameters of the NCs range from 5 to 30 nm. Chemical composition in and around NCs was analyzed by high-angle-angular-dark-field (HAADF) imaging and nanobeam composition line scanning in an advanced (scanning) transmission electron microscope. The NCs are rich in heavier elements compared with their surrounding medium. The formation of self-patterned NCs and its tuning effects on charge transport and optical transparency of ZITO films are also discussed.

Original languageEnglish
Pages (from-to)671-675
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number3
DOIs
Publication statusPublished - Feb 1 2008

Fingerprint

Nanocrystals
nanocrystals
Thin films
thin films
Chemical analysis
Scanning
scanning
Yttria stabilized zirconia
heavy elements
yttria-stabilized zirconia
Transparency
Semiconductor quantum dots
Charge transfer
chemical composition
Electron microscopes
Tuning
electron microscopes
tuning
quantum dots
Semiconductor materials

Keywords

  • A1. Defects and interfaces
  • A1. Quantum dots or nanocrystals
  • A1. Transmission electron microscopy
  • B1. Transparent conducting oxide thin films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Self-patterned nanocrystals in Zn-In-Sn-O thin films. / Zhang, M.; Buchholz, D. B.; Xie, S. J.; Chang, Robert P. H.

In: Journal of Crystal Growth, Vol. 310, No. 3, 01.02.2008, p. 671-675.

Research output: Contribution to journalArticle

Zhang, M. ; Buchholz, D. B. ; Xie, S. J. ; Chang, Robert P. H. / Self-patterned nanocrystals in Zn-In-Sn-O thin films. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 3. pp. 671-675.
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