Self-poling of thin BaTiO3 films by contact potential difference

Igor Lubomirsky; David T. Chang; Oscar M. Stafsudd

Self-poling of thin BaTiO3 films by contact potential difference

Igor Lubomirsky, David T. Chang, Oscar M. Stafsudd

Weizmann Institute of Science, Israel

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO₃ thin films was investigated. Thin (0.35 μm) films were deposited on Si substrates of various orientations and doping. Films deposited on p⁺ Si (10²⁰ cm^-3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. This conclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	535-540
Number of pages	6
Volume	541
Publication status	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

Other

Other	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
City	Boston, MA, USA
Period	11/30/98 → 12/3/98

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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title = "Self-poling of thin BaTiO3 films by contact potential difference",

abstract = "The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO3 thin films was investigated. Thin (0.35 μm) films were deposited on Si substrates of various orientations and doping. Films deposited on p+ Si (1020 cm-3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. This conclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.",

author = "Igor Lubomirsky and Chang, {David T.} and Stafsudd, {Oscar M.}",

year = "1999",

language = "English",

volume = "541",

pages = "535--540",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

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TY - CHAP

T1 - Self-poling of thin BaTiO3 films by contact potential difference

AU - Lubomirsky, Igor

AU - Chang, David T.

AU - Stafsudd, Oscar M.

PY - 1999

Y1 - 1999

N2 - The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO3 thin films was investigated. Thin (0.35 μm) films were deposited on Si substrates of various orientations and doping. Films deposited on p+ Si (1020 cm-3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. This conclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.

AB - The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO3 thin films was investigated. Thin (0.35 μm) films were deposited on Si substrates of various orientations and doping. Films deposited on p+ Si (1020 cm-3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. This conclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.

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AN - SCOPUS:0032592289

VL - 541

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BT - Materials Research Society Symposium - Proceedings

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Y2 - 30 November 1998 through 3 December 1998

ER -