Abstract
The substrate dependence of the ferroelectric properties of sol-gel derived BaTiO3 thin films was investigated. Thin (0.35 μm) films were deposited on Si substrates of various orientations and doping. Films deposited on p+ Si (1020 cm-3 B, 2% Ge) (110) were self-poled. The poling direction is self-restoring even after being reversed by an external bias or heated above the Curie temperature. The pyroelectric coefficient was not zero above the Curie point, which indicated that the films were permanently subjected to an electric field, which originates from the contact potential between the film and the substrate. This conclusion was confirmed by surface photo voltage spectroscopy. The possibility of a paraelectric to ferroelectric transition driven by an electric field due to the contact potential difference must be taken into account for dynamic random access memory (DRAM) applications.
| Original language | English |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 535-540 |
| Number of pages | 6 |
| Volume | 541 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998 |
Other
| Other | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' |
|---|---|
| City | Boston, MA, USA |
| Period | 11/30/98 → 12/3/98 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials