Semiconducting ZnSnxGe1-xN2 alloys prepared by reactive radio-frequency sputtering

Amanda M. Shing, Naomi C. Coronel, Nathan S Lewis, Harry A. Atwater

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSnxGe1-xN2 thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having xGe1-xN2 as tunable semiconductor absorbers for possible use in photovoltaics, light-emitting diodes, or optical sensors.

Original languageEnglish
Article number076104
JournalAPL Materials
Volume3
Issue number7
DOIs
Publication statusPublished - Jul 1 2015

Fingerprint

Optical sensors
Nitrides
Optoelectronic devices
Light emitting diodes
Sputtering
Semiconductor materials
Fabrication
Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Semiconducting ZnSnxGe1-xN2 alloys prepared by reactive radio-frequency sputtering. / Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S; Atwater, Harry A.

In: APL Materials, Vol. 3, No. 7, 076104, 01.07.2015.

Research output: Contribution to journalArticle

Shing, Amanda M. ; Coronel, Naomi C. ; Lewis, Nathan S ; Atwater, Harry A. / Semiconducting ZnSnxGe1-xN2 alloys prepared by reactive radio-frequency sputtering. In: APL Materials. 2015 ; Vol. 3, No. 7.
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