Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

A. Steigerwald, Y. Xu, J. Qi, J. Gregory, X. Liu, J. K. Furdyna, K. Varga, A. B. Hmelo, G. Lüpke, L. C. Feldman, N. Tolk

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Abstract

Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

Original languageEnglish
Article number111910
JournalApplied Physics Letters
Volume94
Issue number11
DOIs
Publication statusPublished - Mar 31 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Steigerwald, A., Xu, Y., Qi, J., Gregory, J., Liu, X., Furdyna, J. K., Varga, K., Hmelo, A. B., Lüpke, G., Feldman, L. C., & Tolk, N. (2009). Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. Applied Physics Letters, 94(11), [111910]. https://doi.org/10.1063/1.3099341