Abstract
Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.
| Original language | English |
|---|---|
| Article number | 111910 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. / Steigerwald, A.; Xu, Y.; Qi, J.; Gregory, J.; Liu, X.; Furdyna, J. K.; Varga, K.; Hmelo, A. B.; Lüpke, G.; Feldman, Leonard C; Tolk, N.
In: Applied Physics Letters, Vol. 94, No. 11, 111910, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves
AU - Steigerwald, A.
AU - Xu, Y.
AU - Qi, J.
AU - Gregory, J.
AU - Liu, X.
AU - Furdyna, J. K.
AU - Varga, K.
AU - Hmelo, A. B.
AU - Lüpke, G.
AU - Feldman, Leonard C
AU - Tolk, N.
PY - 2009
Y1 - 2009
N2 - Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.
AB - Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.
UR - http://www.scopus.com/inward/record.url?scp=63049123895&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63049123895&partnerID=8YFLogxK
U2 - 10.1063/1.3099341
DO - 10.1063/1.3099341
M3 - Article
AN - SCOPUS:63049123895
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 111910
ER -