Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

A. Steigerwald, Y. Xu, J. Qi, J. Gregory, X. Liu, J. K. Furdyna, K. Varga, A. B. Hmelo, G. Lüpke, Leonard C Feldman, N. Tolk

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

Original languageEnglish
Article number111910
JournalApplied Physics Letters
Volume94
Issue number11
DOIs
Publication statusPublished - 2009

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point defects
acoustics
profiles
defects
crystal lattices
interferometry
interstitials
recovery
ion beams
pumps
dosage
annealing
probes
crystals
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Steigerwald, A., Xu, Y., Qi, J., Gregory, J., Liu, X., Furdyna, J. K., ... Tolk, N. (2009). Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. Applied Physics Letters, 94(11), [111910]. https://doi.org/10.1063/1.3099341

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. / Steigerwald, A.; Xu, Y.; Qi, J.; Gregory, J.; Liu, X.; Furdyna, J. K.; Varga, K.; Hmelo, A. B.; Lüpke, G.; Feldman, Leonard C; Tolk, N.

In: Applied Physics Letters, Vol. 94, No. 11, 111910, 2009.

Research output: Contribution to journal › Article

Steigerwald, A, Xu, Y, Qi, J, Gregory, J, Liu, X, Furdyna, JK, Varga, K, Hmelo, AB, Lüpke, G, Feldman, LC & Tolk, N 2009, 'Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves', Applied Physics Letters, vol. 94, no. 11, 111910. https://doi.org/10.1063/1.3099341
Steigerwald A, Xu Y, Qi J, Gregory J, Liu X, Furdyna JK et al. Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. Applied Physics Letters. 2009;94(11). 111910. https://doi.org/10.1063/1.3099341
Steigerwald, A. ; Xu, Y. ; Qi, J. ; Gregory, J. ; Liu, X. ; Furdyna, J. K. ; Varga, K. ; Hmelo, A. B. ; Lüpke, G. ; Feldman, Leonard C ; Tolk, N. / Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. In: Applied Physics Letters. 2009 ; Vol. 94, No. 11.
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