Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

A. Steigerwald; Y. Xu; J. Qi; J. Gregory; X. Liu; J. K. Furdyna; K. Varga; A. B. Hmelo; G. Lüpke; L. C. Feldman; N. Tolk

doi:10.1063/1.3099341

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

A. Steigerwald, Y. Xu, J. Qi, J. Gregory, X. Liu, J. K. Furdyna, K. Varga, A. B. Hmelo, G. Lüpke, L. C. Feldman, N. Tolk

Rutgers University

Research output: Contribution to journal › Article

29 Citations (Scopus)

Abstract

Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

Original language	English
Article number	111910
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3099341
Publication status	Published - Mar 31 2009

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Steigerwald, A., Xu, Y., Qi, J., Gregory, J., Liu, X., Furdyna, J. K., Varga, K., Hmelo, A. B., Lüpke, G., Feldman, L. C., & Tolk, N. (2009). Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves. Applied Physics Letters, 94(11), [111910]. https://doi.org/10.1063/1.3099341

@article{a850d14e3acb4ce699bd8ad5f8fe2b52,

title = "Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves",

abstract = "Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.",

author = "A. Steigerwald and Y. Xu and J. Qi and J. Gregory and X. Liu and Furdyna, {J. K.} and K. Varga and Hmelo, {A. B.} and G. L{\"u}pke and Feldman, {L. C.} and N. Tolk",

year = "2009",

month = mar

day = "31",

doi = "10.1063/1.3099341",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

AU - Steigerwald, A.

AU - Xu, Y.

AU - Qi, J.

AU - Gregory, J.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Varga, K.

AU - Hmelo, A. B.

AU - Lüpke, G.

AU - Feldman, L. C.

AU - Tolk, N.

PY - 2009/3/31

Y1 - 2009/3/31

N2 - Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

AB - Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.

UR - http://www.scopus.com/inward/record.url?scp=63049123895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63049123895&partnerID=8YFLogxK

U2 - 10.1063/1.3099341

DO - 10.1063/1.3099341

M3 - Article

AN - SCOPUS:63049123895

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111910

ER -

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10.1063/1.3099341