Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

J. Y. Suh, R. Lopez, L. C. Feldman, R. F. Haglund

Research output: Contribution to journalArticlepeer-review

252 Citations (Scopus)

Abstract

X-ray diffraction (XRD) and Rutherford backscattering were used for investigating the morphological and optical properties of vanadium dioxide nanoparticles and thin films during their nucleation and growth phases. The processing parameters were correlated in accordance with the temperature and sharpness of the transition. Grain growth and improved crystallinity resulted from thermal annealing. Because of fewer nucleating defects within the volume, the improved crystal perfection led to a large hysteresis. The effects of grain size and crystallinity determined the shape and width of the hysteresis cycle.

Original languageEnglish
Pages (from-to)1209-1213
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number2
DOIs
Publication statusPublished - Jul 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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