Sensitization and protection of lanthanide ion emission in In 2O 3: Eu nanocrystal quantum dots

Javier Vela, Bradley S. Prall, Pawan Rastogi, Donald J. Werder, Joanna L. Casson, Darrick J. Williams, Victor I Klimov, Jennifer A. Hollingsworth

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Lanthanide ions are visible to near-infrared ultranarrowband emitters with long luminescence lifetimes and thus have potential applications in lasing, up-conversion, and bioimaging. However, lanthanide ions have specific and narrow absorption bands characterized by small cross sections, and their luminescence is vibrationally quenched in common solvents. To address these limitations, lanthanide ions were incorporated into a semiconductor nanocrystal quantum dot host matrix, where the semiconductor matrix can sensitize the lanthanide ions toward absorption and reduce solvent quenching effects. Specifically, functional, colloidal europium-doped indium(III) oxide nanocrystal quantum dots were synthesized and characterized structurally and optically. Incorporation of the dopant ions into the matrix, rather than simple adhesion to the quantum dot surfaces, was demonstrated by applying a novel chemical extraction procedure utilizing ethylenediamine-tetraacetic acid followed by quantitative elemental analysis. Sensitization and protection of europium ion emission by the indium(III) oxide semiconductor host were confirmed using photoluminescence excitation and time-resolved photoluminescence spectroscopies, respectively.

Original languageEnglish
Pages (from-to)20246-20250
Number of pages5
JournalJournal of Physical Chemistry C
Volume112
Issue number51
DOIs
Publication statusPublished - 2008

Fingerprint

Lanthanoid Series Elements
ion emission
Rare earth elements
Nanocrystals
Semiconductor quantum dots
nanocrystals
quantum dots
Ions
Europium
europium
ions
Indium
ethylenediamine
indium
matrices
Luminescence
luminescence
photoluminescence
oxides
Semiconductor materials

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Vela, J., Prall, B. S., Rastogi, P., Werder, D. J., Casson, J. L., Williams, D. J., ... Hollingsworth, J. A. (2008). Sensitization and protection of lanthanide ion emission in In 2O 3: Eu nanocrystal quantum dots. Journal of Physical Chemistry C, 112(51), 20246-20250. https://doi.org/10.1021/jp8074749

Sensitization and protection of lanthanide ion emission in In 2O 3 : Eu nanocrystal quantum dots. / Vela, Javier; Prall, Bradley S.; Rastogi, Pawan; Werder, Donald J.; Casson, Joanna L.; Williams, Darrick J.; Klimov, Victor I; Hollingsworth, Jennifer A.

In: Journal of Physical Chemistry C, Vol. 112, No. 51, 2008, p. 20246-20250.

Research output: Contribution to journalArticle

Vela, J, Prall, BS, Rastogi, P, Werder, DJ, Casson, JL, Williams, DJ, Klimov, VI & Hollingsworth, JA 2008, 'Sensitization and protection of lanthanide ion emission in In 2O 3: Eu nanocrystal quantum dots', Journal of Physical Chemistry C, vol. 112, no. 51, pp. 20246-20250. https://doi.org/10.1021/jp8074749
Vela, Javier ; Prall, Bradley S. ; Rastogi, Pawan ; Werder, Donald J. ; Casson, Joanna L. ; Williams, Darrick J. ; Klimov, Victor I ; Hollingsworth, Jennifer A. / Sensitization and protection of lanthanide ion emission in In 2O 3 : Eu nanocrystal quantum dots. In: Journal of Physical Chemistry C. 2008 ; Vol. 112, No. 51. pp. 20246-20250.
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