Abstract
We report the first measurements of photocurrent quantum yields for semiconductor/liquid junctions in the short-wavelength region of the spectrum (200-600 nm). The key feature of this wavelength region is the short penetration depth for the absorbed photon (less than 100 Å), which allows measurement of the majority carrier collection velocity. Spectra have been obtained for semiconductor/liquid, semiconductor/metal, and semiconductor/insulator/metal junctions. For all semiconductors studied (n-Si, p-Si, n-GaAs, n-InP, a-Si:H), the spectral responses of the liquid junctions showed higher quantum yields than the metal junctions, indicating greater majority carrier losses at the metal junctions. This general trend was independent of redox species, solvent, supporting electrolyte, and metal overlayer. The spectral response data can also be used to distinguish Schottky barrier behavior from electrocatalytic behavior of metal overlayers, and this approach has been used to study several semiconductor/metal film junctions in contact with electrolytes.
| Original language | English |
|---|---|
| Pages (from-to) | 6002-6009 |
| Number of pages | 8 |
| Journal | Journal of Physical Chemistry |
| Volume | 94 |
| Issue number | 15 |
| Publication status | Published - 1990 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
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Short-wavelength spectral response properties of semiconductor/liquid junctions. / Kumar, Amit; Lewis, Nathan S.
In: Journal of Physical Chemistry, Vol. 94, No. 15, 1990, p. 6002-6009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Short-wavelength spectral response properties of semiconductor/liquid junctions
AU - Kumar, Amit
AU - Lewis, Nathan S
PY - 1990
Y1 - 1990
N2 - We report the first measurements of photocurrent quantum yields for semiconductor/liquid junctions in the short-wavelength region of the spectrum (200-600 nm). The key feature of this wavelength region is the short penetration depth for the absorbed photon (less than 100 Å), which allows measurement of the majority carrier collection velocity. Spectra have been obtained for semiconductor/liquid, semiconductor/metal, and semiconductor/insulator/metal junctions. For all semiconductors studied (n-Si, p-Si, n-GaAs, n-InP, a-Si:H), the spectral responses of the liquid junctions showed higher quantum yields than the metal junctions, indicating greater majority carrier losses at the metal junctions. This general trend was independent of redox species, solvent, supporting electrolyte, and metal overlayer. The spectral response data can also be used to distinguish Schottky barrier behavior from electrocatalytic behavior of metal overlayers, and this approach has been used to study several semiconductor/metal film junctions in contact with electrolytes.
AB - We report the first measurements of photocurrent quantum yields for semiconductor/liquid junctions in the short-wavelength region of the spectrum (200-600 nm). The key feature of this wavelength region is the short penetration depth for the absorbed photon (less than 100 Å), which allows measurement of the majority carrier collection velocity. Spectra have been obtained for semiconductor/liquid, semiconductor/metal, and semiconductor/insulator/metal junctions. For all semiconductors studied (n-Si, p-Si, n-GaAs, n-InP, a-Si:H), the spectral responses of the liquid junctions showed higher quantum yields than the metal junctions, indicating greater majority carrier losses at the metal junctions. This general trend was independent of redox species, solvent, supporting electrolyte, and metal overlayer. The spectral response data can also be used to distinguish Schottky barrier behavior from electrocatalytic behavior of metal overlayers, and this approach has been used to study several semiconductor/metal film junctions in contact with electrolytes.
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M3 - Article
VL - 94
SP - 6002
EP - 6009
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
SN - 0022-3654
IS - 15
ER -