Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


A (2×1) surface reconstruction distinct from the clean Si(100)-(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.

Original languageEnglish
Pages (from-to)2779-2781
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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