Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

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Abstract

A (2×1) surface reconstruction distinct from the clean Si(100)-(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.

Original languageEnglish
Pages (from-to)2779-2781
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number26
DOIs
Publication statusPublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Headrick, R. L., Weir, B. E., Levi, A. F. J., Eaglesham, D. J., & Feldman, L. C. (1990). Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping. Applied Physics Letters, 57(26), 2779-2781. https://doi.org/10.1063/1.103785