Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping

R. L. Headrick, B. E. Weir, A. F J Levi, D. J. Eaglesham, Leonard C Feldman

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

A (2×1) surface reconstruction distinct from the clean Si(100)-(2×1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2×1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.

Original languageEnglish
Pages (from-to)2779-2781
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number26
DOIs
Publication statusPublished - 1990

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boron
silicon
ultrahigh vacuum
Hall effect

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Headrick, R. L., Weir, B. E., Levi, A. F. J., Eaglesham, D. J., & Feldman, L. C. (1990). Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping. Applied Physics Letters, 57(26), 2779-2781. https://doi.org/10.1063/1.103785

Si(100)-(2×1)boron reconstruction : Self-limiting monolayer doping. / Headrick, R. L.; Weir, B. E.; Levi, A. F J; Eaglesham, D. J.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 57, No. 26, 1990, p. 2779-2781.

Research output: Contribution to journalArticle

Headrick, RL, Weir, BE, Levi, AFJ, Eaglesham, DJ & Feldman, LC 1990, 'Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping', Applied Physics Letters, vol. 57, no. 26, pp. 2779-2781. https://doi.org/10.1063/1.103785
Headrick, R. L. ; Weir, B. E. ; Levi, A. F J ; Eaglesham, D. J. ; Feldman, Leonard C. / Si(100)-(2×1)boron reconstruction : Self-limiting monolayer doping. In: Applied Physics Letters. 1990 ; Vol. 57, No. 26. pp. 2779-2781.
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