Significance of the channeling surface peak in thin-film analysis

Robert L. Kauffman, Leonard C Feldman, P. J. Silverman, R. A. Zuhr

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Abstract

The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well-characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.

Original languageEnglish
Pages (from-to)93-94
Number of pages2
JournalApplied Physics Letters
Volume32
Issue number2
DOIs
Publication statusPublished - 1978

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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