Significance of the channeling surface peak in thin-film analysis

Robert L. Kauffman, Leonard C Feldman, P. J. Silverman, R. A. Zuhr

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well-characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.

Original languageEnglish
Pages (from-to)93-94
Number of pages2
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 1978

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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