Significance of the channeling surface peak in thin-film analysis

Robert L. Kauffman, Leonard C Feldman, P. J. Silverman, R. A. Zuhr

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well-characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.

Original languageEnglish
Pages (from-to)93-94
Number of pages2
JournalApplied Physics Letters
Volume32
Issue number2
DOIs
Publication statusPublished - 1978

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thin films
scattering
scaling laws
backscattering
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Significance of the channeling surface peak in thin-film analysis. / Kauffman, Robert L.; Feldman, Leonard C; Silverman, P. J.; Zuhr, R. A.

In: Applied Physics Letters, Vol. 32, No. 2, 1978, p. 93-94.

Research output: Contribution to journalArticle

Kauffman, Robert L. ; Feldman, Leonard C ; Silverman, P. J. ; Zuhr, R. A. / Significance of the channeling surface peak in thin-film analysis. In: Applied Physics Letters. 1978 ; Vol. 32, No. 2. pp. 93-94.
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