Silanone (formula presented) on Si(100)

Intermediate for initial silicon oxidation

Y. J. Chabal, Krishnan Raghavachari, X. Zhang, Eric Garfunkel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Infrared-absorption measurements and first-principles quantum chemical calculations reveal that the initial oxidation of clean (formula presented) by (formula presented) involves the formation of a metastable silanone intermediate, (formula presented) containing two oxygen atoms presumably from the same (formula presented) molecule. Oxygen insertion into the surface silicon Si-Si backbonds is either thermally activated (1-eV barrier) or induced by atomic hydrogen exposure with formation of novel dihydride intermediates.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number16
DOIs
Publication statusPublished - Jan 1 2002

Fingerprint

Silicon
Oxygen
Oxidation
oxidation
Infrared absorption
silicon
Hydrogen
Atoms
dihydrides
Molecules
infrared absorption
insertion
oxygen atoms
silanone
oxygen
hydrogen
molecules

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Silanone (formula presented) on Si(100) : Intermediate for initial silicon oxidation. / Chabal, Y. J.; Raghavachari, Krishnan; Zhang, X.; Garfunkel, Eric.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 16, 01.01.2002, p. 1-4.

Research output: Contribution to journalArticle

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