Infrared-absorption measurements and first-principles quantum chemical calculations reveal that the initial oxidation of clean (formula presented) by (formula presented) involves the formation of a metastable silanone intermediate, (formula presented) containing two oxygen atoms presumably from the same (formula presented) molecule. Oxygen insertion into the surface silicon Si-Si backbonds is either thermally activated (1-eV barrier) or induced by atomic hydrogen exposure with formation of novel dihydride intermediates.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 2002|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics