Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering

Angelo Bongiorno, Alfredo Pasquarello, Mark S. Hybertsen, Leonard C Feldman

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structure of the Si(1 0 0)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 Å. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO2 interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO 2 interface model presenting a disordered pattern of Si-Si dimers in the transition region.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
Publication statusPublished - Apr 2004

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ion scattering
Silicon
Scattering
Ions
Crystals
silicon
crystals
Model structures
ions
simulation
Dimers
dimers
Experiments
energy
geometry
Geometry

Keywords

  • Channeling phenomena
  • Ion scattering
  • Si(1 0 0)-SiO interface

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering. / Bongiorno, Angelo; Pasquarello, Alfredo; Hybertsen, Mark S.; Feldman, Leonard C.

In: Microelectronic Engineering, Vol. 72, No. 1-4, 04.2004, p. 197-200.

Research output: Contribution to journalArticle

Bongiorno, Angelo ; Pasquarello, Alfredo ; Hybertsen, Mark S. ; Feldman, Leonard C. / Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering. In: Microelectronic Engineering. 2004 ; Vol. 72, No. 1-4. pp. 197-200.
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