Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering

Angelo Bongiorno; Alfredo Pasquarello; Mark S. Hybertsen; L. C. Feldman

doi:10.1016/j.mee.2003.12.036

Silicon crystal distortions at the Si(1 0 0)-SiO₂ interface from analysis of ion-scattering

Angelo Bongiorno, Alfredo Pasquarello, Mark S. Hybertsen, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The structure of the Si(1 0 0)-SiO₂ interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 Å. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO₂ interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO ₂ interface model presenting a disordered pattern of Si-Si dimers in the transition region.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Microelectronic Engineering
Volume	72
Issue number	1-4
DOIs	https://doi.org/10.1016/j.mee.2003.12.036
Publication status	Published - Apr 2004
Event	Proceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain Duration: Jun 18 2003 → Jun 20 2003

Keywords

Channeling phenomena
Ion scattering
Si(1 0 0)-SiO interface

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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@article{b1ba1c46d74442118a0ca61c32236fb6,

title = "Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering",

abstract = "The structure of the Si(1 0 0)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 {\AA}. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO2 interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO 2 interface model presenting a disordered pattern of Si-Si dimers in the transition region.",

keywords = "Channeling phenomena, Ion scattering, Si(1 0 0)-SiO interface",

author = "Angelo Bongiorno and Alfredo Pasquarello and Hybertsen, {Mark S.} and Feldman, {L. C.}",

note = "Funding Information: The authors thank Jochen Mullhaeuser for his contribution to the experimental part of this work. A.B. and A.P. acknowledge support from the Swiss National Science Foundation (Grant No. 620-57850.99) and the Swiss Center for Scientific Computing.; Proceedings of the 13th Biennial Conference on Insulating Film ; Conference date: 18-06-2003 Through 20-06-2003",

year = "2004",

month = apr,

doi = "10.1016/j.mee.2003.12.036",

language = "English",

volume = "72",

pages = "197--200",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering

AU - Bongiorno, Angelo

AU - Pasquarello, Alfredo

AU - Hybertsen, Mark S.

AU - Feldman, L. C.

N1 - Funding Information: The authors thank Jochen Mullhaeuser for his contribution to the experimental part of this work. A.B. and A.P. acknowledge support from the Swiss National Science Foundation (Grant No. 620-57850.99) and the Swiss Center for Scientific Computing.

PY - 2004/4

Y1 - 2004/4

N2 - The structure of the Si(1 0 0)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 Å. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO2 interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO 2 interface model presenting a disordered pattern of Si-Si dimers in the transition region.

AB - The structure of the Si(1 0 0)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 Å. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO2 interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO 2 interface model presenting a disordered pattern of Si-Si dimers in the transition region.

KW - Channeling phenomena

KW - Ion scattering

KW - Si(1 0 0)-SiO interface

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DO - 10.1016/j.mee.2003.12.036

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EP - 200

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

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T2 - Proceedings of the 13th Biennial Conference on Insulating Film

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