Abstract
The structure of the Si(1 0 0)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 and 2.0 MeV. These measurements are sensitive to Si displacements at the interface between 0.07 and 0.14 Å. To interpret our experimental results, we perform ion-scattering simulations on two realistic model structures of the Si(1 0 0)-SiO2 interface. The comparison between experiment and simulation over the full range of considered ion energies supports a Si(1 0 0)-SiO 2 interface model presenting a disordered pattern of Si-Si dimers in the transition region.
| Original language | English |
|---|---|
| Pages (from-to) | 197-200 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 72 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Apr 1 2004 |
| Event | Proceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain Duration: Jun 18 2003 → Jun 20 2003 |
Keywords
- Channeling phenomena
- Ion scattering
- Si(1 0 0)-SiO interface
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Bongiorno, A., Pasquarello, A., Hybertsen, M. S., & Feldman, L. C. (2004). Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering. Microelectronic Engineering, 72(1-4), 197-200. https://doi.org/10.1016/j.mee.2003.12.036