Abstract
Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.
| Original language | English |
|---|---|
| Title of host publication | Defects in Microelectronic Materials and Devices |
| Publisher | CRC Press |
| Pages | 575-614 |
| Number of pages | 40 |
| ISBN (Electronic) | 9781420043778 |
| ISBN (Print) | 9781420043761 |
| Publication status | Published - Jan 1 2008 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Silicon dioxide–silicon carbide interfaces : Current status and recent advances. / Dhar, S.; Pantelides, Sokrates T.; Williams, J. R.; Feldman, Leonard C.
Defects in Microelectronic Materials and Devices. CRC Press, 2008. p. 575-614.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Silicon dioxide–silicon carbide interfaces
T2 - Current status and recent advances
AU - Dhar, S.
AU - Pantelides, Sokrates T.
AU - Williams, J. R.
AU - Feldman, Leonard C
PY - 2008/1/1
Y1 - 2008/1/1
N2 - Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.
AB - Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.
UR - http://www.scopus.com/inward/record.url?scp=85056922160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056922160&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:85056922160
SN - 9781420043761
SP - 575
EP - 614
BT - Defects in Microelectronic Materials and Devices
PB - CRC Press
ER -