Silicon dioxide–silicon carbide interfaces: Current status and recent advances

S. Dhar; Sokrates T. Pantelides; J. R. Williams; Leonard C Feldman

Silicon dioxide–silicon carbide interfaces: Current status and recent advances

S. Dhar, Sokrates T. Pantelides, J. R. Williams, Leonard C Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

Original language	English
Title of host publication	Defects in Microelectronic Materials and Devices
Publisher	CRC Press
Pages	575-614
Number of pages	40
ISBN (Electronic)	9781420043778
ISBN (Print)	9781420043761
Publication status	Published - Jan 1 2008

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)
Physics and Astronomy(all)

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N2 - Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

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