Silicon dioxide–silicon carbide interfaces: Current status and recent advances

S. Dhar, Sokrates T. Pantelides, J. R. Williams, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

Original languageEnglish
Title of host publicationDefects in Microelectronic Materials and Devices
PublisherCRC Press
Pages575-614
Number of pages40
ISBN (Electronic)9781420043778
ISBN (Print)9781420043761
Publication statusPublished - Jan 1 2008

Fingerprint

Silicon carbide
silicon carbides
Electronic equipment
electronics
research and development
Thermal conductivity
Materials properties
Energy gap
thermal conductivity
hardness
breakdown
Hardness
broadband
saturation
Electrons
silicon carbide
electrons
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Dhar, S., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2008). Silicon dioxide–silicon carbide interfaces: Current status and recent advances. In Defects in Microelectronic Materials and Devices (pp. 575-614). CRC Press.

Silicon dioxide–silicon carbide interfaces : Current status and recent advances. / Dhar, S.; Pantelides, Sokrates T.; Williams, J. R.; Feldman, Leonard C.

Defects in Microelectronic Materials and Devices. CRC Press, 2008. p. 575-614.

Research output: Chapter in Book/Report/Conference proceedingChapter

Dhar, S, Pantelides, ST, Williams, JR & Feldman, LC 2008, Silicon dioxide–silicon carbide interfaces: Current status and recent advances. in Defects in Microelectronic Materials and Devices. CRC Press, pp. 575-614.
Dhar S, Pantelides ST, Williams JR, Feldman LC. Silicon dioxide–silicon carbide interfaces: Current status and recent advances. In Defects in Microelectronic Materials and Devices. CRC Press. 2008. p. 575-614
Dhar, S. ; Pantelides, Sokrates T. ; Williams, J. R. ; Feldman, Leonard C. / Silicon dioxide–silicon carbide interfaces : Current status and recent advances. Defects in Microelectronic Materials and Devices. CRC Press, 2008. pp. 575-614
@inbook{c053b793949c42a9914aec67b1447571,
title = "Silicon dioxide–silicon carbide interfaces: Current status and recent advances",
abstract = "Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.",
author = "S. Dhar and Pantelides, {Sokrates T.} and Williams, {J. R.} and Feldman, {Leonard C}",
year = "2008",
month = "1",
day = "1",
language = "English",
isbn = "9781420043761",
pages = "575--614",
booktitle = "Defects in Microelectronic Materials and Devices",
publisher = "CRC Press",

}

TY - CHAP

T1 - Silicon dioxide–silicon carbide interfaces

T2 - Current status and recent advances

AU - Dhar, S.

AU - Pantelides, Sokrates T.

AU - Williams, J. R.

AU - Feldman, Leonard C

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

AB - Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

UR - http://www.scopus.com/inward/record.url?scp=85056922160&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056922160&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:85056922160

SN - 9781420043761

SP - 575

EP - 614

BT - Defects in Microelectronic Materials and Devices

PB - CRC Press

ER -