Silicon dioxide–silicon carbide interfaces: Current status and recent advances

S. Dhar, Sokrates T. Pantelides, J. R. Williams, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.

Original languageEnglish
Title of host publicationDefects in Microelectronic Materials and Devices
PublisherCRC Press
Pages575-614
Number of pages40
ISBN (Electronic)9781420043778
ISBN (Print)9781420043761
Publication statusPublished - Jan 1 2008

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Dhar, S., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2008). Silicon dioxide–silicon carbide interfaces: Current status and recent advances. In Defects in Microelectronic Materials and Devices (pp. 575-614). CRC Press.