Abstract
Research and development throughout the last decade has led to the emergence of silicon carbide (SiC) electronics. SiC’s potential for high-temperature, high-power, and highfrequency electronics arises out of attractive material properties such as wide band gap, high critical breakdown field, high thermal conductivity, and high electron saturation velocity. These properties, coupled with extreme chemical inertness and mechanical hardness, make SiC extremely attractive for electronics operating under extreme conditions.
| Original language | English |
|---|---|
| Title of host publication | Defects in Microelectronic Materials and Devices |
| Publisher | CRC Press |
| Pages | 575-614 |
| Number of pages | 40 |
| ISBN (Electronic) | 9781420043778 |
| ISBN (Print) | 9781420043761 |
| Publication status | Published - Jan 1 2008 |
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ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Dhar, S., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2008). Silicon dioxide–silicon carbide interfaces: Current status and recent advances. In Defects in Microelectronic Materials and Devices (pp. 575-614). CRC Press.