Abstract
B-C and B-C:Si films were deposited by r.f. magnetron sputtering from a hot-pressed B4C polycrystalline target with Si pieces placed on the preferentially eroded zone. The effect of Si content, ranging from 2 to 6 at-%, on the B-C films was studied at a fixed substrate bias of -70 V. Preliminary depositions with different substrate bias showed that with -70 V the deposition of free carbon was avoided. All deposited films were X-ray diffraction (XRD) amorphous, and the result was confirmed by Fourier transform infrared spectroscopy (FTIR). Si-containing films were harder than Si-free ones, reaching 30 GPa for compositions up to 4.5 at.-% Si. After thermal annealing of the B-C:Si films up to 700 °C, an increase of the hardness was observed. The maximum hardness of 37 GPa was obtained for 2 at-% Si film annealed at 600 °C, which corresponds to an increase of -23% in relation to the as-deposited conditions. No vestiges of crystallinity were found either by XRD or FTIR analysis suggesting that the structure of the Si-containing films consisted of a local order arrangement of boron-rich icosahedral units
| Original language | English |
|---|---|
| Journal | Plasma Processes and Polymers |
| Volume | 6 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2009 |
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Keywords
- Boron carbide
- Hardness
- Heat treatment
- Sputtering
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics
Cite this
Silicon effect on the hardness of r.f. Sputtered B-C : Si amorphous films. / Louro, Cristina; Oliveira, João C.; Chhowalla, Manish; Cavaleiro, Albano.
In: Plasma Processes and Polymers, Vol. 6, No. SUPPL. 1, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon effect on the hardness of r.f. Sputtered B-C
T2 - Si amorphous films
AU - Louro, Cristina
AU - Oliveira, João C.
AU - Chhowalla, Manish
AU - Cavaleiro, Albano
PY - 2009
Y1 - 2009
N2 - B-C and B-C:Si films were deposited by r.f. magnetron sputtering from a hot-pressed B4C polycrystalline target with Si pieces placed on the preferentially eroded zone. The effect of Si content, ranging from 2 to 6 at-%, on the B-C films was studied at a fixed substrate bias of -70 V. Preliminary depositions with different substrate bias showed that with -70 V the deposition of free carbon was avoided. All deposited films were X-ray diffraction (XRD) amorphous, and the result was confirmed by Fourier transform infrared spectroscopy (FTIR). Si-containing films were harder than Si-free ones, reaching 30 GPa for compositions up to 4.5 at.-% Si. After thermal annealing of the B-C:Si films up to 700 °C, an increase of the hardness was observed. The maximum hardness of 37 GPa was obtained for 2 at-% Si film annealed at 600 °C, which corresponds to an increase of -23% in relation to the as-deposited conditions. No vestiges of crystallinity were found either by XRD or FTIR analysis suggesting that the structure of the Si-containing films consisted of a local order arrangement of boron-rich icosahedral units
AB - B-C and B-C:Si films were deposited by r.f. magnetron sputtering from a hot-pressed B4C polycrystalline target with Si pieces placed on the preferentially eroded zone. The effect of Si content, ranging from 2 to 6 at-%, on the B-C films was studied at a fixed substrate bias of -70 V. Preliminary depositions with different substrate bias showed that with -70 V the deposition of free carbon was avoided. All deposited films were X-ray diffraction (XRD) amorphous, and the result was confirmed by Fourier transform infrared spectroscopy (FTIR). Si-containing films were harder than Si-free ones, reaching 30 GPa for compositions up to 4.5 at.-% Si. After thermal annealing of the B-C:Si films up to 700 °C, an increase of the hardness was observed. The maximum hardness of 37 GPa was obtained for 2 at-% Si film annealed at 600 °C, which corresponds to an increase of -23% in relation to the as-deposited conditions. No vestiges of crystallinity were found either by XRD or FTIR analysis suggesting that the structure of the Si-containing films consisted of a local order arrangement of boron-rich icosahedral units
KW - Boron carbide
KW - Hardness
KW - Heat treatment
KW - Sputtering
UR - http://www.scopus.com/inward/record.url?scp=77954894204&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954894204&partnerID=8YFLogxK
U2 - 10.1002/ppap.200930415
DO - 10.1002/ppap.200930415
M3 - Article
VL - 6
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - SUPPL. 1
ER -