Silicon growth at the two-dimensional limit on Ag(111)

Andrew J. Mannix, Brian Kiraly, Brandon L. Fisher, Mark C Hersam, Nathan P. Guisinger

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Having fueled the microelectronics industry for over 50 years, silicon is arguably the most studied and influential semiconductor. With the recent emergence of two-dimensional (2D) materials (e.g., graphene, MoS2, phosphorene, etc.), it is natural to contemplate the behavior of Si in the 2D limit. Guided by atomic-scale studies utilizing ultrahigh vacuum (UHV), scanning tunneling microscopy (STM), and spectroscopy (STS), we have investigated the 2D limits of Si growth on Ag(111). In contrast to previous reports of a distinct sp2-bonded silicene allotrope, we observe the evolution of apparent surface alloys (ordered 2D silicon-Ag surface phases), which culminate in the precipitation of crystalline, sp3-bonded Si(111) nanosheets. These nanosheets are capped with a √3 honeycomb phase that is isostructural to a √3 honeycomb-chained-trimer (HCT) reconstruction of Ag on Si(111). Further investigations reveal evidence for silicon intermixing with the Ag(111) substrate followed by surface precipitation of crystalline, sp 3-bonded silicon nanosheets. These conclusions are corroborated by ex situ atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Even at the 2D limit, scanning tunneling spectroscopy shows that the sp3-bonded silicon nanosheets exhibit semiconducting electronic properties.

Original languageEnglish
Pages (from-to)7538-7547
Number of pages10
JournalACS Nano
Volume8
Issue number7
DOIs
Publication statusPublished - Jul 22 2014

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Silicon
Nanosheets
silicon
Spectroscopy
Crystalline materials
Graphite
Ultrahigh vacuum
Scanning tunneling microscopy
trimers
microelectronics
Microelectronics
Electronic properties
Graphene
spectroscopy
ultrahigh vacuum
Raman spectroscopy
scanning tunneling microscopy
Atomic force microscopy
graphene
X ray photoelectron spectroscopy

Keywords

  • molecular beam epitaxy
  • scanning tunneling microscopy
  • silicene
  • surface reconstruction
  • two-dimensional materials

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Mannix, A. J., Kiraly, B., Fisher, B. L., Hersam, M. C., & Guisinger, N. P. (2014). Silicon growth at the two-dimensional limit on Ag(111). ACS Nano, 8(7), 7538-7547. https://doi.org/10.1021/nn503000w

Silicon growth at the two-dimensional limit on Ag(111). / Mannix, Andrew J.; Kiraly, Brian; Fisher, Brandon L.; Hersam, Mark C; Guisinger, Nathan P.

In: ACS Nano, Vol. 8, No. 7, 22.07.2014, p. 7538-7547.

Research output: Contribution to journalArticle

Mannix, AJ, Kiraly, B, Fisher, BL, Hersam, MC & Guisinger, NP 2014, 'Silicon growth at the two-dimensional limit on Ag(111)', ACS Nano, vol. 8, no. 7, pp. 7538-7547. https://doi.org/10.1021/nn503000w
Mannix AJ, Kiraly B, Fisher BL, Hersam MC, Guisinger NP. Silicon growth at the two-dimensional limit on Ag(111). ACS Nano. 2014 Jul 22;8(7):7538-7547. https://doi.org/10.1021/nn503000w
Mannix, Andrew J. ; Kiraly, Brian ; Fisher, Brandon L. ; Hersam, Mark C ; Guisinger, Nathan P. / Silicon growth at the two-dimensional limit on Ag(111). In: ACS Nano. 2014 ; Vol. 8, No. 7. pp. 7538-7547.
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