Silicon oxidation and oxynitridation in the ultrathin regime

Ion scattering studies

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.

Original languageEnglish
Pages (from-to)302-313
Number of pages12
JournalBrazilian Journal of Physics
Volume27
Issue number2
Publication statusPublished - Jun 1997

Fingerprint

ion scattering
oxidation
silicon
oxynitrides
marking
oxides
high resolution
oxygen
interactions
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Silicon oxidation and oxynitridation in the ultrathin regime : Ion scattering studies. / Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.

In: Brazilian Journal of Physics, Vol. 27, No. 2, 06.1997, p. 302-313.

Research output: Contribution to journalArticle

Gusev, E. P. ; Lu, H. C. ; Gustafsson, T. ; Garfunkel, Eric. / Silicon oxidation and oxynitridation in the ultrathin regime : Ion scattering studies. In: Brazilian Journal of Physics. 1997 ; Vol. 27, No. 2. pp. 302-313.
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