Silicon oxidation and oxynitridation in the ultrathin regime: Ion scattering studies

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

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Abstract

The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.

Original languageEnglish
Pages (from-to)302-313
Number of pages12
JournalBrazilian Journal of Physics
Volume27
Issue number2
Publication statusPublished - Jun 1997

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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