Abstract
The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.
| Original language | English |
|---|---|
| Pages (from-to) | 302-313 |
| Number of pages | 12 |
| Journal | Brazilian Journal of Physics |
| Volume | 27 |
| Issue number | 2 |
| Publication status | Published - Jun 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Silicon oxidation and oxynitridation in the ultrathin regime : Ion scattering studies. / Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.
In: Brazilian Journal of Physics, Vol. 27, No. 2, 06.1997, p. 302-313.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon oxidation and oxynitridation in the ultrathin regime
T2 - Ion scattering studies
AU - Gusev, E. P.
AU - Lu, H. C.
AU - Gustafsson, T.
AU - Garfunkel, Eric
PY - 1997/6
Y1 - 1997/6
N2 - The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.
AB - The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.
UR - http://www.scopus.com/inward/record.url?scp=0031506198&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031506198&partnerID=8YFLogxK
M3 - Article
VL - 27
SP - 302
EP - 313
JO - Brazilian Journal of Physics
JF - Brazilian Journal of Physics
SN - 0103-9733
IS - 2
ER -