TY - JOUR
T1 - Silicon oxidation and oxynitridation in the ultrathin regime
T2 - Ion scattering studies
AU - Gusev, E. P.
AU - Lu, H. C.
AU - Gustafsson, T.
AU - Garfunkel, E.
PY - 1997/6/1
Y1 - 1997/6/1
N2 - The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (<5 nm) dielectric films (oxides, SiO2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.
AB - The paper reviews our recent studies of the mechanistic and structural aspects of ultrathin (<5 nm) dielectric films (oxides, SiO2, and oxynitrides, SiOxNy) thermally grown on silicon surfaces. High resolution medium energy ion scattering (MEIS) has been used as the primary tool in these studies. We discuss: (i) the growth mechanism of ultrathin films using isotopic (16O2/18O2) labeling methods, (ii) the initial stages of the interaction of oxygen with silicon surfaces under different temperature and pressure conditions, including a new roughening regime, (iii) the transition region near the oxide/substrate interface, and (iv) silicon oxynitridation in N2O and NO.
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M3 - Review article
AN - SCOPUS:0031506198
VL - 27
SP - 302
EP - 313
JO - Brazilian Journal of Physics
JF - Brazilian Journal of Physics
SN - 0103-9733
IS - 2
ER -