Abstract
The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.
| Original language | English |
|---|---|
| Pages (from-to) | 31-33 |
| Number of pages | 3 |
| Journal | Electrochemical Society Interface |
| Volume | 14 |
| Issue number | 1 |
| Publication status | Published - Mar 2005 |
Fingerprint
ASJC Scopus subject areas
- Chemical Engineering(all)
Cite this
Silicon surface and interface issues for nanoelectronics. / Chabal, Yves J.; Feldman, Leonard C.
In: Electrochemical Society Interface, Vol. 14, No. 1, 03.2005, p. 31-33.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon surface and interface issues for nanoelectronics
AU - Chabal, Yves J.
AU - Feldman, Leonard C
PY - 2005/3
Y1 - 2005/3
N2 - The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.
AB - The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.
UR - http://www.scopus.com/inward/record.url?scp=17444415281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17444415281&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:17444415281
VL - 14
SP - 31
EP - 33
JO - Electrochemical Society Interface
JF - Electrochemical Society Interface
SN - 1064-8208
IS - 1
ER -