Silicon surface and interface issues for nanoelectronics

Yves J. Chabal; Leonard C. Feldman

Silicon surface and interface issues for nanoelectronics

Yves J. Chabal, Leonard C. Feldman

Rutgers University

Research output: Contribution to journal › Review article › peer-review

12 Citations (Scopus)

Abstract

The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.

Original language	English
Pages (from-to)	31-33
Number of pages	3
Journal	Electrochemical Society Interface
Volume	14
Issue number	1
Publication status	Published - Mar 2005

ASJC Scopus subject areas

Electrochemistry

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AB - The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.

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Silicon surface and interface issues for nanoelectronics

Abstract

ASJC Scopus subject areas

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