Abstract
The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.
| Original language | English |
|---|---|
| Pages (from-to) | 31-33 |
| Number of pages | 3 |
| Journal | Electrochemical Society Interface |
| Volume | 14 |
| Issue number | 1 |
| Publication status | Published - Mar 1 2005 |
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ASJC Scopus subject areas
- Electrochemistry
Cite this
Chabal, Y. J., & Feldman, L. C. (2005). Silicon surface and interface issues for nanoelectronics. Electrochemical Society Interface, 14(1), 31-33.