Silicon surface and interface issues for nanoelectronics

Yves J. Chabal, Leonard C Feldman

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The importance of the silicon/silicon dioxide interface and some of the interface issues related to nanoelectronics were discussed. One of the most important aspect that has received most attention is the need for an alternate dielectric constant. The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS) provided a way for silicon-based technology where gate dielectric layer is considered to be one of the most critical issues. All these issues can be accomplished through the tools and techniques of surface science as well as the creativity of material scientists.

Original languageEnglish
Pages (from-to)31-33
Number of pages3
JournalElectrochemical Society Interface
Volume14
Issue number1
Publication statusPublished - Mar 2005

Fingerprint

Nanoelectronics
Silicon
Gate dielectrics
Silicon Dioxide
Permittivity
Silica
Semiconductor materials

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Silicon surface and interface issues for nanoelectronics. / Chabal, Yves J.; Feldman, Leonard C.

In: Electrochemical Society Interface, Vol. 14, No. 1, 03.2005, p. 31-33.

Research output: Contribution to journalArticle

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