Abstract
Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479979448 |
| DOIs | |
| Publication status | Published - Dec 14 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015 |
Other
| Other | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country | United States |
| City | New Orleans |
| Period | 6/14/15 → 6/19/15 |
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Keywords
- Cuprous oxide
- earth abundant photovoltaic
- floating zone
- single crystal
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Single crystal Cu2O photovoltaics by the floating zone method. / Omelchenko, Stefan T.; Tolstova, Yulia; Wilson, Samantha S.; Atwater, Harry A.; Lewis, Nathan S.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355920.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Single crystal Cu2O photovoltaics by the floating zone method
AU - Omelchenko, Stefan T.
AU - Tolstova, Yulia
AU - Wilson, Samantha S.
AU - Atwater, Harry A.
AU - Lewis, Nathan S
PY - 2015/12/14
Y1 - 2015/12/14
N2 - Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.
AB - Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.
KW - Cuprous oxide
KW - earth abundant photovoltaic
KW - floating zone
KW - single crystal
UR - http://www.scopus.com/inward/record.url?scp=84961615098&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84961615098&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2015.7355920
DO - 10.1109/PVSC.2015.7355920
M3 - Conference contribution
AN - SCOPUS:84961615098
SN - 9781479979448
BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -