Single crystal Cu2O photovoltaics by the floating zone method

Stefan T. Omelchenko; Yulia Tolstova; Samantha S. Wilson; Harry A. Atwater; Nathan S Lewis

doi:10.1109/PVSC.2015.7355920

Single crystal Cu2O photovoltaics by the floating zone method

Stefan T. Omelchenko, Yulia Tolstova, Samantha S. Wilson, Harry A. Atwater, Nathan S Lewis

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355920
Publication status	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

Cuprous oxide
earth abundant photovoltaic
floating zone
single crystal

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355920

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Single crystal Cu2O photovoltaics by the floating zone method. / Omelchenko, Stefan T.; Tolstova, Yulia; Wilson, Samantha S.; Atwater, Harry A.; Lewis, Nathan S.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355920.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Omelchenko, ST, Tolstova, Y, Wilson, SS, Atwater, HA & Lewis, NS 2015, Single crystal Cu2O photovoltaics by the floating zone method. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355920, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355920

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abstract = "Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.",

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AB - Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners. While inclusions of CuO are inherent to the floating zone growth process we show that they can be removed by post-annealing with phase purity and crystallinity shown by x-ray diffraction. We discuss the role of CuO inclusions on the electronic properties of single crystal Cu2O wafers using Hall measurements. Changes in the resistivity and mobility due to post-annealing are correlated to changing defect densities obtained from steady-state photoluminescence. The optimization of the Cu2O wafers provides a pathway towards the first float zone single crystal Cu2O photovoltaic device.

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