Single gallium nitride nanowire lasers

Justin C. Johnson, Heon Jin Choi, Kelly P. Knutsen, Richard D Schaller, Peidong Yang, Richard J. Saykally

Research output: Contribution to journalArticle

1027 Citations (Scopus)

Abstract

There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasers and nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm -2) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

Original languageEnglish
Pages (from-to)106-110
Number of pages5
JournalNature Materials
Volume1
Issue number2
DOIs
Publication statusPublished - Oct 2002

Fingerprint

Gallium nitride
gallium nitrides
Nanowires
nanowires
Lasers
lasers
Electrons
Semiconductor materials
Stimulated emission
Frequency converters
Geometry
Microfabrication
coherent light
frequency converters
room temperature
radiation
Laser modes
geometry
Photodetectors
optoelectronic devices

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Johnson, J. C., Choi, H. J., Knutsen, K. P., Schaller, R. D., Yang, P., & Saykally, R. J. (2002). Single gallium nitride nanowire lasers. Nature Materials, 1(2), 106-110. https://doi.org/10.1038/nmat728

Single gallium nitride nanowire lasers. / Johnson, Justin C.; Choi, Heon Jin; Knutsen, Kelly P.; Schaller, Richard D; Yang, Peidong; Saykally, Richard J.

In: Nature Materials, Vol. 1, No. 2, 10.2002, p. 106-110.

Research output: Contribution to journalArticle

Johnson, JC, Choi, HJ, Knutsen, KP, Schaller, RD, Yang, P & Saykally, RJ 2002, 'Single gallium nitride nanowire lasers', Nature Materials, vol. 1, no. 2, pp. 106-110. https://doi.org/10.1038/nmat728
Johnson JC, Choi HJ, Knutsen KP, Schaller RD, Yang P, Saykally RJ. Single gallium nitride nanowire lasers. Nature Materials. 2002 Oct;1(2):106-110. https://doi.org/10.1038/nmat728
Johnson, Justin C. ; Choi, Heon Jin ; Knutsen, Kelly P. ; Schaller, Richard D ; Yang, Peidong ; Saykally, Richard J. / Single gallium nitride nanowire lasers. In: Nature Materials. 2002 ; Vol. 1, No. 2. pp. 106-110.
@article{01b2e7d637554b449b798290747b07fe,
title = "Single gallium nitride nanowire lasers",
abstract = "There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasers and nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm -2) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.",
author = "Johnson, {Justin C.} and Choi, {Heon Jin} and Knutsen, {Kelly P.} and Schaller, {Richard D} and Peidong Yang and Saykally, {Richard J.}",
year = "2002",
month = "10",
doi = "10.1038/nmat728",
language = "English",
volume = "1",
pages = "106--110",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",
number = "2",

}

TY - JOUR

T1 - Single gallium nitride nanowire lasers

AU - Johnson, Justin C.

AU - Choi, Heon Jin

AU - Knutsen, Kelly P.

AU - Schaller, Richard D

AU - Yang, Peidong

AU - Saykally, Richard J.

PY - 2002/10

Y1 - 2002/10

N2 - There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasers and nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm -2) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

AB - There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasers and nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm -2) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

UR - http://www.scopus.com/inward/record.url?scp=0038137285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038137285&partnerID=8YFLogxK

U2 - 10.1038/nmat728

DO - 10.1038/nmat728

M3 - Article

C2 - 12618824

AN - SCOPUS:0038137285

VL - 1

SP - 106

EP - 110

JO - Nature Materials

JF - Nature Materials

SN - 1476-1122

IS - 2

ER -