The fabrication and characterization of single molecule units on silicion(100) surface was analyzed using ultra-high vacuum scanning tunneling microscope (UHV-STM). The impact of feedback controlled lithography (FCL) hydrogen desorption on VLSI technology was also studied. The analysis of mechanical, chemical and electronic properties of desorbed species suggested that efficient STM potentiometric location of p-n junctions made them useful as alignment markers.
|Number of pages||1|
|Journal||Proceedings of the IEEE Great Lakes Symposium on VLSI|
|Publication status||Published - Jan 1 2001|
|Event||11th Great Lakes Sysmposium on VLSI (GLSVLSI 2001) - West Lafayette, IN, United States|
Duration: Mar 22 2001 → Mar 23 2001
ASJC Scopus subject areas
- Electrical and Electronic Engineering