Abstract
The fabrication and characterization of single molecule units on silicion(100) surface was analyzed using ultra-high vacuum scanning tunneling microscope (UHV-STM). The impact of feedback controlled lithography (FCL) hydrogen desorption on VLSI technology was also studied. The analysis of mechanical, chemical and electronic properties of desorbed species suggested that efficient STM potentiometric location of p-n junctions made them useful as alignment markers.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE Great Lakes Symposium on VLSI |
| Pages | 128 |
| Number of pages | 1 |
| Publication status | Published - 2001 |
| Event | 11th Great Lakes Sysmposium on VLSI (GLSVLSI 2001) - West Lafayette, IN, United States Duration: Mar 22 2001 → Mar 23 2001 |
Other
| Other | 11th Great Lakes Sysmposium on VLSI (GLSVLSI 2001) |
|---|---|
| Country | United States |
| City | West Lafayette, IN |
| Period | 3/22/01 → 3/23/01 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Single molecule electronics. / Hersam, Mark C.
Proceedings of the IEEE Great Lakes Symposium on VLSI. 2001. p. 128.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Single molecule electronics
AU - Hersam, Mark C
PY - 2001
Y1 - 2001
N2 - The fabrication and characterization of single molecule units on silicion(100) surface was analyzed using ultra-high vacuum scanning tunneling microscope (UHV-STM). The impact of feedback controlled lithography (FCL) hydrogen desorption on VLSI technology was also studied. The analysis of mechanical, chemical and electronic properties of desorbed species suggested that efficient STM potentiometric location of p-n junctions made them useful as alignment markers.
AB - The fabrication and characterization of single molecule units on silicion(100) surface was analyzed using ultra-high vacuum scanning tunneling microscope (UHV-STM). The impact of feedback controlled lithography (FCL) hydrogen desorption on VLSI technology was also studied. The analysis of mechanical, chemical and electronic properties of desorbed species suggested that efficient STM potentiometric location of p-n junctions made them useful as alignment markers.
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M3 - Conference contribution
SP - 128
BT - Proceedings of the IEEE Great Lakes Symposium on VLSI
ER -