Single-nanowire Si solar cells

M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, H. A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)


Solar cells based on arrays of CVD-grown Si nano- or micro-wires are being considered as a potentially low-cost route to implementing a vertical multijunction cell design via radial p-n junctions. This geometry has been predicted to enable efficiencies competitive with planar multicrystalline Si designs, while reducing the materials and processing costs of solar cell fabrication [1]. To further assess the potential efficiency of cells based on this design, we present here experimental measurements of minority carrier diffusion lengths and surface recombination rates within nanowires via fabrication and characterization of single-wire solar cell devices. Furthermore, we consider a potential Si wire array-based solar cell design, and present device physics modeling of single-wire photovoltaic efficiency. Based on experimentally observed diffusion lengths within our wires, we model a radial junction wire solar cell capable of 17% photovoltaic energy conversion efficiency.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Publication statusPublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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