SiO2 film thickness metrology by x-ray photoelectron spectroscopy

Z. H. Lu, J. P. McCaffrey, B. Brar, G. D. Wilk, R. M. Wallace, Leonard C Feldman, S. P. Tay

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Abstract

Silicon dioxide films grown by industrial thermal furnace, rapid thermal, and low-pressure thermal methods were measured by x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), spectroscopic ellipsometry, and capacitance-voltage analysis. Based on TEM measurements, the photoelectron effective attenuation lengths in the SiO2 and Si are found to be 2.96±0.19 and 2.11±0.13 nm, respectively. The oxide physical thicknesses (range from 1.5 to 12.5 nm) as measured by all above techniques are in good agreement. The electrical thickness is noted to be slightly thicker than the physical thickness.

Original languageEnglish
Pages (from-to)2764-2766
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number19
Publication statusPublished - Nov 10 1997

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lu, Z. H., McCaffrey, J. P., Brar, B., Wilk, G. D., Wallace, R. M., Feldman, L. C., & Tay, S. P. (1997). SiO2 film thickness metrology by x-ray photoelectron spectroscopy. Applied Physics Letters, 71(19), 2764-2766.