Abstract
Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. However, in the late 1990's it was found that the SiC/SiO2 interface had high interface trap densities, resulting in poor electron mobilities. Annealing in hydrogen, which is key to the quality of Si/SiO2 interfaces, proved ineffective. This paper presents a synthesis of theoretical and experimental work by the authors in the last six years and parallel work in the literature. High-quality SiC/SiO2 interfaces were achieved by annealing in NO gas and monatomic H. The key elements that lead to highquality Si/SiO2 interfaces and low-quality SiC/SiO2 interfaces are identified and the role of N and H treatments is described. More specifically, optimal Si and SiC surfaces for oxidation are identified and the atomic-scale processes of oxidation and resulting interface defects are described. In the case of SiC, we conclude that excess carbon at the SiC/SiO2 interface leads to a bonded Si-C-O interlayer with a mix of fourfold- and threefold-coordinated C and Si atoms. The threefold coordinated atoms are responsible for the high interface trap density and can be eliminated either by H-passivation or replacement by N. Residual Si-Si bonds, which are partially passivated by H and N remain the main limitation. Perspectives for the future for both Si- and SiC-based MOSFETs are discussed.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Pages | 935-948 |
| Number of pages | 14 |
| Volume | 527-529 |
| Edition | PART 2 |
| Publication status | Published - 2006 |
| Event | International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Number | PART 2 |
| Volume | 527-529 |
| ISSN (Print) | 02555476 |
Other
| Other | International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) |
|---|---|
| Country | United States |
| City | Pittsburgh, PA |
| Period | 9/18/05 → 9/23/05 |
Fingerprint
Keywords
- Interface trap density
- Mobilities
- Passivation
- Si/SiO
- SiC/SiO
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Si/SiO2 and SiC/SiO2 interfaces for MOSFETs - Challenges and advances. / Pantelides, Sokrates T.; Wang, Sanwu; Franceschetti, A.; Buczko, R.; Di Ventra, M.; Rashkeev, S. N.; Tsetseris, L.; Evans, M. H.; Batyrev, G.; Feldman, Leonard C; Dhar, S.; McDonald, K.; Weiler, R. A.; Schrimpf, R. D.; Fleetwood, D. M.; Zhou, X. J.; Williams, J. R.; Tin, C. C.; Chung, G. Y.; Isaacs-Smith, T.; Wang, S. R.; Pennycook, S. J.; Duscher, G.; Van Beninern, K.; Porter, L. M.
Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. p. 935-948 (Materials Science Forum; Vol. 527-529, No. PART 2).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Si/SiO2 and SiC/SiO2 interfaces for MOSFETs - Challenges and advances
AU - Pantelides, Sokrates T.
AU - Wang, Sanwu
AU - Franceschetti, A.
AU - Buczko, R.
AU - Di Ventra, M.
AU - Rashkeev, S. N.
AU - Tsetseris, L.
AU - Evans, M. H.
AU - Batyrev, G.
AU - Feldman, Leonard C
AU - Dhar, S.
AU - McDonald, K.
AU - Weiler, R. A.
AU - Schrimpf, R. D.
AU - Fleetwood, D. M.
AU - Zhou, X. J.
AU - Williams, J. R.
AU - Tin, C. C.
AU - Chung, G. Y.
AU - Isaacs-Smith, T.
AU - Wang, S. R.
AU - Pennycook, S. J.
AU - Duscher, G.
AU - Van Beninern, K.
AU - Porter, L. M.
PY - 2006
Y1 - 2006
N2 - Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. However, in the late 1990's it was found that the SiC/SiO2 interface had high interface trap densities, resulting in poor electron mobilities. Annealing in hydrogen, which is key to the quality of Si/SiO2 interfaces, proved ineffective. This paper presents a synthesis of theoretical and experimental work by the authors in the last six years and parallel work in the literature. High-quality SiC/SiO2 interfaces were achieved by annealing in NO gas and monatomic H. The key elements that lead to highquality Si/SiO2 interfaces and low-quality SiC/SiO2 interfaces are identified and the role of N and H treatments is described. More specifically, optimal Si and SiC surfaces for oxidation are identified and the atomic-scale processes of oxidation and resulting interface defects are described. In the case of SiC, we conclude that excess carbon at the SiC/SiO2 interface leads to a bonded Si-C-O interlayer with a mix of fourfold- and threefold-coordinated C and Si atoms. The threefold coordinated atoms are responsible for the high interface trap density and can be eliminated either by H-passivation or replacement by N. Residual Si-Si bonds, which are partially passivated by H and N remain the main limitation. Perspectives for the future for both Si- and SiC-based MOSFETs are discussed.
AB - Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. However, in the late 1990's it was found that the SiC/SiO2 interface had high interface trap densities, resulting in poor electron mobilities. Annealing in hydrogen, which is key to the quality of Si/SiO2 interfaces, proved ineffective. This paper presents a synthesis of theoretical and experimental work by the authors in the last six years and parallel work in the literature. High-quality SiC/SiO2 interfaces were achieved by annealing in NO gas and monatomic H. The key elements that lead to highquality Si/SiO2 interfaces and low-quality SiC/SiO2 interfaces are identified and the role of N and H treatments is described. More specifically, optimal Si and SiC surfaces for oxidation are identified and the atomic-scale processes of oxidation and resulting interface defects are described. In the case of SiC, we conclude that excess carbon at the SiC/SiO2 interface leads to a bonded Si-C-O interlayer with a mix of fourfold- and threefold-coordinated C and Si atoms. The threefold coordinated atoms are responsible for the high interface trap density and can be eliminated either by H-passivation or replacement by N. Residual Si-Si bonds, which are partially passivated by H and N remain the main limitation. Perspectives for the future for both Si- and SiC-based MOSFETs are discussed.
KW - Interface trap density
KW - Mobilities
KW - Passivation
KW - Si/SiO
KW - SiC/SiO
UR - http://www.scopus.com/inward/record.url?scp=33846387775&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846387775&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33846387775
SN - 9780878494255
VL - 527-529
T3 - Materials Science Forum
SP - 935
EP - 948
BT - Materials Science Forum
ER -