SnTe-AgBiTe2 as an efficient thermoelectric material with low thermal conductivity

Gangjian Tan, Fengyuan Shi, Hui Sun, Li Dong Zhao, Ctirad Uher, Vinayak P. Dravid, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m-1 K-1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe-AgBiTe2 a promising thermoelectric material.

Original languageEnglish
Pages (from-to)20849-20854
Number of pages6
JournalJournal of Materials Chemistry A
Volume2
Issue number48
DOIs
Publication statusPublished - Dec 28 2014

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Thermal conductivity
Thermoelectric energy conversion
Scattering
Hole concentration
Tin
Point defects
Phonons
Chemical analysis
Alloying
Vacancies
Nanostructures
Electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

SnTe-AgBiTe2 as an efficient thermoelectric material with low thermal conductivity. / Tan, Gangjian; Shi, Fengyuan; Sun, Hui; Zhao, Li Dong; Uher, Ctirad; Dravid, Vinayak P.; Kanatzidis, Mercouri G.

In: Journal of Materials Chemistry A, Vol. 2, No. 48, 28.12.2014, p. 20849-20854.

Research output: Contribution to journalArticle

Tan, Gangjian ; Shi, Fengyuan ; Sun, Hui ; Zhao, Li Dong ; Uher, Ctirad ; Dravid, Vinayak P. ; Kanatzidis, Mercouri G. / SnTe-AgBiTe2 as an efficient thermoelectric material with low thermal conductivity. In: Journal of Materials Chemistry A. 2014 ; Vol. 2, No. 48. pp. 20849-20854.
@article{51390ad27bbc47b0a01c48e503edfb8e,
title = "SnTe-AgBiTe2 as an efficient thermoelectric material with low thermal conductivity",
abstract = "SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m-1 K-1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe-AgBiTe2 a promising thermoelectric material.",
author = "Gangjian Tan and Fengyuan Shi and Hui Sun and Zhao, {Li Dong} and Ctirad Uher and Dravid, {Vinayak P.} and Kanatzidis, {Mercouri G}",
year = "2014",
month = "12",
day = "28",
doi = "10.1039/c4ta05530f",
language = "English",
volume = "2",
pages = "20849--20854",
journal = "Journal of Materials Chemistry A",
issn = "2050-7488",
publisher = "Royal Society of Chemistry",
number = "48",

}

TY - JOUR

T1 - SnTe-AgBiTe2 as an efficient thermoelectric material with low thermal conductivity

AU - Tan, Gangjian

AU - Shi, Fengyuan

AU - Sun, Hui

AU - Zhao, Li Dong

AU - Uher, Ctirad

AU - Dravid, Vinayak P.

AU - Kanatzidis, Mercouri G

PY - 2014/12/28

Y1 - 2014/12/28

N2 - SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m-1 K-1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe-AgBiTe2 a promising thermoelectric material.

AB - SnTe is an intriguing alternative to its sister compound PbTe in thermoelectric energy conversion because of their electronic and structural similarity; however, it is challenging to optimize its thermoelectric performance to the level of PbTe because of the difficulties in decreasing its intrinsically large hole population and high thermal conductivity arising from the tin vacancies. We demonstrate here that by alloying some AgBiTe2 in SnTe, thus forming AgSnxBiTex+2 compositions the hole concentration can be duly decreased because of the high efficiency of Bi as an electron donor. The lattice thermal conductivity is also decreased due to the strong scattering of phonons (by point defect scattering as well as Ag-rich nanostructures) to achieve a value of ∼0.7 W m-1 K-1 at ∼750 K. As a result, a high thermoelectric figure ZT of merit of ∼1.1 at 775 K is achieved by chemical composition optimization (×∼15), making lead free SnTe-AgBiTe2 a promising thermoelectric material.

UR - http://www.scopus.com/inward/record.url?scp=84911881508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84911881508&partnerID=8YFLogxK

U2 - 10.1039/c4ta05530f

DO - 10.1039/c4ta05530f

M3 - Article

VL - 2

SP - 20849

EP - 20854

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

SN - 2050-7488

IS - 48

ER -