Soft x-ray photoemission studies of the HfO2/SiO2/Si system

S. Sayan, Eric Garfunkel, S. Suzer

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Abstract

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems.

Original languageEnglish
Pages (from-to)2135-2137
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number12
DOIs
Publication statusPublished - Mar 25 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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