Soft x-ray photoemission studies of the HfO2/SiO2/Si system

S. Sayan; E. Garfunkel; S. Suzer

doi:10.1063/1.1450049

Soft x-ray photoemission studies of the HfO₂/SiO₂/Si system

S. Sayan, E. Garfunkel, S. Suzer

Rutgers University

Research output: Contribution to journal › Article › peer-review

153 Citations (Scopus)

Abstract

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO₂/SiO ₂/Si and HfO₂/SiO_xN_y/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO ₂ (in HfO₂/15ÅSiO₂/Si) and SiO ₂ (in 15 Å SiO₂/Si). There is no measurable difference between the HfO₂ valence-band maximum positions of the HfO₂/10ÅSiO_xN_y/Si and HfO ₂/15ÅSiO₂/Si systems.

Original language	English
Pages (from-to)	2135-2137
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	12
DOIs	https://doi.org/10.1063/1.1450049
Publication status	Published - Mar 25 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Soft x-ray photoemission studies of the HfO2/SiO2/Si system",

abstract = "Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15{\AA}SiO2/Si) and SiO 2 (in 15 {\AA} SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10{\AA}SiOxNy/Si and HfO 2/15{\AA}SiO2/Si systems.",

author = "S. Sayan and E. Garfunkel and S. Suzer",

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AU - Sayan, S.

AU - Garfunkel, E.

AU - Suzer, S.

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Y1 - 2002/3/25

N2 - Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems.

AB - Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems.

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