Abstract
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems.
Original language | English |
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Pages (from-to) | 2135-2137 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 12 |
DOIs | |
Publication status | Published - Mar 25 2002 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)