Abstract
Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of
| Original language | English |
|---|---|
| Article number | 134301 |
| Journal | Journal of Applied Physics |
| Volume | 115 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Apr 7 2014 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Solar energy conversion via hot electron internal photoemission in metallic nanostructures : Efficiency estimates. / Leenheer, Andrew J.; Narang, Prineha; Lewis, Nathan S.; Atwater, Harry A.
In: Journal of Applied Physics, Vol. 115, No. 13, 134301, 07.04.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Solar energy conversion via hot electron internal photoemission in metallic nanostructures
T2 - Efficiency estimates
AU - Leenheer, Andrew J.
AU - Narang, Prineha
AU - Lewis, Nathan S.
AU - Atwater, Harry A.
PY - 2014/4/7
Y1 - 2014/4/7
N2 - Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of
AB - Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of
UR - http://www.scopus.com/inward/record.url?scp=84898029093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84898029093&partnerID=8YFLogxK
U2 - 10.1063/1.4870040
DO - 10.1063/1.4870040
M3 - Article
VL - 115
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 13
M1 - 134301
ER -