Solution-deposited organic - Inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors

Young Geun Ha, Jonathan D. Emery, Michael J. Bedzyk, Hakan Usta, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable π-electron phosphonic acid building blocks and ultrathin ZrO2 layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5 - 12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm2), excellent in ulating properties (leakage current densities as low as 10- 7 A/cm2), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN2 as representative organic semiconductors and zinc - tin - oxide (Zn - Sn - O) as a representative inorganic semiconductor function well at low voltages (<±4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.

Original languageEnglish
Pages (from-to)10239-10250
Number of pages12
JournalJournal of the American Chemical Society
Volume133
Issue number26
DOIs
Publication statusPublished - Jul 6 2011

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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