Solution-processable graphene oxide as an efficient hole transport layer in polymer solar cells

Shao Sian Li, Kun Hua Tu, Chih Cheng Lin, Chun Wei Chen, Manish Chhowalla

Research output: Contribution to journalArticle

588 Citations (Scopus)


The utilization of graphene oxide (GO) thin films as the hole transport and electron blocking layer in organic photovoltaics (OPVs) is demonstrated. The incorporation of GO deposited from neutral solutions between the photoactive poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) layer and the transparent and conducting indium tin oxide (ITO) leads to a decrease in recombination of electrons and holes and leakage currents. This results in a dramatic increase in the OPV efficiencies to values that are comparable to devices fabricated with PEDOT:PSS as the hole transport layer. Our results indicate that GO could be a simple solution-processable alternative to PEDOT:PSS as the effective hole transport and electron blocking layer in OPV and light-emitting diode devices.

Original languageEnglish
Pages (from-to)3169-3174
Number of pages6
JournalACS nano
Issue number6
Publication statusPublished - Jun 22 2010



  • Graphene oxide
  • Hole transport layers
  • Organic electronics
  • Organic photovoltaics

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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