Solution-processable organic dielectrics for graphene electronics

Cecilia Mattevi, Florian Colléaux, Hokwon Kim, Yen Hung Lin, Kyung T. Park, Manish Chhowalla, Thomas D. Anthopoulos

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO 2 based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO 2 based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (

Original languageEnglish
Article number344017
JournalNanotechnology
Volume23
Issue number34
DOIs
Publication statusPublished - Aug 31 2012

Fingerprint

Graphite
Graphene
Electronic equipment
Self assembled monolayers
Fluorine containing polymers
Carrier mobility
Charge carriers
Hysteresis
Demonstrations
Doping (additives)
Fabrication
Electric potential
Graphene transistors
Temperature

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Mattevi, C., Colléaux, F., Kim, H., Lin, Y. H., Park, K. T., Chhowalla, M., & Anthopoulos, T. D. (2012). Solution-processable organic dielectrics for graphene electronics. Nanotechnology, 23(34), [344017]. https://doi.org/10.1088/0957-4484/23/34/344017

Solution-processable organic dielectrics for graphene electronics. / Mattevi, Cecilia; Colléaux, Florian; Kim, Hokwon; Lin, Yen Hung; Park, Kyung T.; Chhowalla, Manish; Anthopoulos, Thomas D.

In: Nanotechnology, Vol. 23, No. 34, 344017, 31.08.2012.

Research output: Contribution to journalArticle

Mattevi, C, Colléaux, F, Kim, H, Lin, YH, Park, KT, Chhowalla, M & Anthopoulos, TD 2012, 'Solution-processable organic dielectrics for graphene electronics', Nanotechnology, vol. 23, no. 34, 344017. https://doi.org/10.1088/0957-4484/23/34/344017
Mattevi, Cecilia ; Colléaux, Florian ; Kim, Hokwon ; Lin, Yen Hung ; Park, Kyung T. ; Chhowalla, Manish ; Anthopoulos, Thomas D. / Solution-processable organic dielectrics for graphene electronics. In: Nanotechnology. 2012 ; Vol. 23, No. 34.
@article{36377e32f7854cf3ae35c8840479381d,
title = "Solution-processable organic dielectrics for graphene electronics",
abstract = "We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO 2 based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO 2 based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (",
author = "Cecilia Mattevi and Florian Coll{\'e}aux and Hokwon Kim and Lin, {Yen Hung} and Park, {Kyung T.} and Manish Chhowalla and Anthopoulos, {Thomas D.}",
year = "2012",
month = "8",
day = "31",
doi = "10.1088/0957-4484/23/34/344017",
language = "English",
volume = "23",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "34",

}

TY - JOUR

T1 - Solution-processable organic dielectrics for graphene electronics

AU - Mattevi, Cecilia

AU - Colléaux, Florian

AU - Kim, Hokwon

AU - Lin, Yen Hung

AU - Park, Kyung T.

AU - Chhowalla, Manish

AU - Anthopoulos, Thomas D.

PY - 2012/8/31

Y1 - 2012/8/31

N2 - We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO 2 based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO 2 based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (

AB - We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO 2 based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO 2 based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (

UR - http://www.scopus.com/inward/record.url?scp=84864974870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864974870&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/23/34/344017

DO - 10.1088/0957-4484/23/34/344017

M3 - Article

C2 - 22885685

AN - SCOPUS:84864974870

VL - 23

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 34

M1 - 344017

ER -