Solution-processable white-light-emitting hybrid semiconductor bulk materials with high photoluminescence quantum efficiency

Mojgan Roushan; Xiao Zhang; Jing Li

doi:10.1002/anie.201105110

Solution-processable white-light-emitting hybrid semiconductor bulk materials with high photoluminescence quantum efficiency

Mojgan Roushan, Xiao Zhang, Jing Li

Rutgers University

Research output: Contribution to journal › Article

111 Citations (Scopus)

Abstract

Glowing white: Bulk hybrid semiconductor materials built from periodic nanostructured 2D layers of ZnS emit bright white light. Their emission intensity, quantum efficiency, and color quality can be systematically tuned by varying the composition of both the inorganic and organic components. The materials show great promise as a new type of single-phase white-light-emitting phosphors.

Original language	English
Pages (from-to)	436-439
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	51
Issue number	2
DOIs	https://doi.org/10.1002/anie.201105110
Publication status	Published - Jan 9 2012

Fingerprint

Keywords

light-emitting diodes (LEDs)
organic-inorganic hybrid composites
phosphors
semiconductors
white light

ASJC Scopus subject areas

Catalysis
Chemistry(all)

Cite this

Roushan, M., Zhang, X., & Li, J. (2012). Solution-processable white-light-emitting hybrid semiconductor bulk materials with high photoluminescence quantum efficiency. Angewandte Chemie - International Edition, 51(2), 436-439. https://doi.org/10.1002/anie.201105110

@article{cfbc9d8e25cf4d45bf16f9546bc4d73a,

title = "Solution-processable white-light-emitting hybrid semiconductor bulk materials with high photoluminescence quantum efficiency",

abstract = "Glowing white: Bulk hybrid semiconductor materials built from periodic nanostructured 2D layers of ZnS emit bright white light. Their emission intensity, quantum efficiency, and color quality can be systematically tuned by varying the composition of both the inorganic and organic components. The materials show great promise as a new type of single-phase white-light-emitting phosphors.",

keywords = "light-emitting diodes (LEDs), organic-inorganic hybrid composites, phosphors, semiconductors, white light",

author = "Mojgan Roushan and Xiao Zhang and Jing Li",

year = "2012",

month = jan

day = "9",

doi = "10.1002/anie.201105110",

language = "English",

volume = "51",

pages = "436--439",

journal = "Angewandte Chemie - International Edition",

issn = "1433-7851",

publisher = "John Wiley and Sons Ltd",

number = "2",

}

TY - JOUR

T1 - Solution-processable white-light-emitting hybrid semiconductor bulk materials with high photoluminescence quantum efficiency

AU - Roushan, Mojgan

AU - Zhang, Xiao

AU - Li, Jing

PY - 2012/1/9

Y1 - 2012/1/9

N2 - Glowing white: Bulk hybrid semiconductor materials built from periodic nanostructured 2D layers of ZnS emit bright white light. Their emission intensity, quantum efficiency, and color quality can be systematically tuned by varying the composition of both the inorganic and organic components. The materials show great promise as a new type of single-phase white-light-emitting phosphors.

AB - Glowing white: Bulk hybrid semiconductor materials built from periodic nanostructured 2D layers of ZnS emit bright white light. Their emission intensity, quantum efficiency, and color quality can be systematically tuned by varying the composition of both the inorganic and organic components. The materials show great promise as a new type of single-phase white-light-emitting phosphors.

KW - light-emitting diodes (LEDs)

KW - organic-inorganic hybrid composites

KW - phosphors

KW - semiconductors

KW - white light

UR - http://www.scopus.com/inward/record.url?scp=84855424871&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855424871&partnerID=8YFLogxK

U2 - 10.1002/anie.201105110

DO - 10.1002/anie.201105110

M3 - Article

C2 - 22127950

AN - SCOPUS:84855424871

VL - 51

SP - 436

EP - 439

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

SN - 1433-7851

IS - 2

ER -

Access to Document

10.1002/anie.201105110