Abstract
Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 944-948 |
| Number of pages | 5 |
| Journal | Nature Nanotechnology |
| Volume | 10 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 1 2015 |
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ASJC Scopus subject areas
- Bioengineering
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Solution-processed carbon nanotube thin-film complementary static random access memory. / Geier, Michael L.; McMorrow, Julian J.; Xu, Weichao; Zhu, Jian; Kim, Chris H.; Marks, Tobin J; Hersam, Mark C.
In: Nature Nanotechnology, Vol. 10, No. 11, 01.11.2015, p. 944-948.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Solution-processed carbon nanotube thin-film complementary static random access memory
AU - Geier, Michael L.
AU - McMorrow, Julian J.
AU - Xu, Weichao
AU - Zhu, Jian
AU - Kim, Chris H.
AU - Marks, Tobin J
AU - Hersam, Mark C
PY - 2015/11/1
Y1 - 2015/11/1
N2 - Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.
AB - Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.
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U2 - 10.1038/nnano.2015.197
DO - 10.1038/nnano.2015.197
M3 - Article
AN - SCOPUS:84947030091
VL - 10
SP - 944
EP - 948
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 11
ER -