Using scalable solution processing, layered gallium telluride (GaTe) nanoflake dispersions are produced in surfactant-free, low-boiling-point, water-ethanol cosolvent mixtures. During exfoliation, chemical degradation of the ambient-reactive GaTe crystals is minimized by using deoxygenated solvents in a sealed tip ultrasonication system. The structural and chemical integrity of the solution-processed GaTe nanoflakes is subsequently confirmed with a comprehensive suite of microscopic and spectroscopic analyses. Furthermore, field-effect transistors and phototransistors based on individual solution-processed GaTe nanoflakes show electronic and optoelectronic properties, respectively, that are comparable to micromechanically exfoliated GaTe. Minimal solution-processing residues from the surfactant-free, low-boiling-point cosolvent dispersion medium coupled with the high intrinsic hole doping of GaTe produces the highest electrical conductivity among solution-processed layered nanoflake thin films without post-treatment. Large-area photodetectors based on these electrically percolating thin films of solution-processed GaTe nanoflakes show a positive correlation between responsivity and illumination intensity, with a high photoconversion gain that is explained by a combination of defect-mediated optical processes and photothermal effects. Overall, this study establishes solution-processed layered GaTe nanoflakes as a leading candidate for high-performance, large-area, thin-film photodetectors.
- gallium telluride
- liquid phase exfoliation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering