Solution-processed self-assembled nanodielectrics on template-stripped metal substrates

Julian J. McMorrow, Amanda R. Walker, Vinod K. Sangwan, Deep Jariwala, Emily Hoffman, Ken Everaerts, Antonio Facchetti, Mark C Hersam, Tobin J Marks

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness -2, leakage current -2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

Original languageEnglish
Pages (from-to)26360-26366
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number48
DOIs
Publication statusPublished - Dec 9 2015

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Keywords

  • capacitor
  • nanodielectric
  • self-assembly
  • template strip
  • unconventional electronics

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

McMorrow, J. J., Walker, A. R., Sangwan, V. K., Jariwala, D., Hoffman, E., Everaerts, K., ... Marks, T. J. (2015). Solution-processed self-assembled nanodielectrics on template-stripped metal substrates. ACS Applied Materials and Interfaces, 7(48), 26360-26366. https://doi.org/10.1021/acsami.5b07744