Solution-processed self-assembled nanodielectrics on template-stripped metal substrates

Julian J. McMorrow, Amanda R. Walker, Vinod K. Sangwan, Deep Jariwala, Emily Hoffman, Ken Everaerts, Antonio Facchetti, Mark C Hersam, Tobin J Marks

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness -2, leakage current -2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

Original languageEnglish
Pages (from-to)26360-26366
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number48
DOIs
Publication statusPublished - Dec 9 2015

Fingerprint

Zirconia
Metals
Semiconducting silicon
Transistors
Capacitance
Substrates
Flexible electronics
Gate dielectrics
Aluminum
Leakage currents
Transport properties
Integrated circuits
Multilayers
Surface roughness
Semiconductor materials
Electric potential
zirconium oxide
Temperature

Keywords

  • capacitor
  • nanodielectric
  • self-assembly
  • template strip
  • unconventional electronics

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

McMorrow, J. J., Walker, A. R., Sangwan, V. K., Jariwala, D., Hoffman, E., Everaerts, K., ... Marks, T. J. (2015). Solution-processed self-assembled nanodielectrics on template-stripped metal substrates. ACS Applied Materials and Interfaces, 7(48), 26360-26366. https://doi.org/10.1021/acsami.5b07744

Solution-processed self-assembled nanodielectrics on template-stripped metal substrates. / McMorrow, Julian J.; Walker, Amanda R.; Sangwan, Vinod K.; Jariwala, Deep; Hoffman, Emily; Everaerts, Ken; Facchetti, Antonio; Hersam, Mark C; Marks, Tobin J.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 48, 09.12.2015, p. 26360-26366.

Research output: Contribution to journalArticle

McMorrow, JJ, Walker, AR, Sangwan, VK, Jariwala, D, Hoffman, E, Everaerts, K, Facchetti, A, Hersam, MC & Marks, TJ 2015, 'Solution-processed self-assembled nanodielectrics on template-stripped metal substrates', ACS Applied Materials and Interfaces, vol. 7, no. 48, pp. 26360-26366. https://doi.org/10.1021/acsami.5b07744
McMorrow JJ, Walker AR, Sangwan VK, Jariwala D, Hoffman E, Everaerts K et al. Solution-processed self-assembled nanodielectrics on template-stripped metal substrates. ACS Applied Materials and Interfaces. 2015 Dec 9;7(48):26360-26366. https://doi.org/10.1021/acsami.5b07744
McMorrow, Julian J. ; Walker, Amanda R. ; Sangwan, Vinod K. ; Jariwala, Deep ; Hoffman, Emily ; Everaerts, Ken ; Facchetti, Antonio ; Hersam, Mark C ; Marks, Tobin J. / Solution-processed self-assembled nanodielectrics on template-stripped metal substrates. In: ACS Applied Materials and Interfaces. 2015 ; Vol. 7, No. 48. pp. 26360-26366.
@article{70deef5298fc4b12a6bb69daedeea61f,
title = "Solution-processed self-assembled nanodielectrics on template-stripped metal substrates",
abstract = "The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness -2, leakage current -2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.",
keywords = "capacitor, nanodielectric, self-assembly, template strip, unconventional electronics",
author = "McMorrow, {Julian J.} and Walker, {Amanda R.} and Sangwan, {Vinod K.} and Deep Jariwala and Emily Hoffman and Ken Everaerts and Antonio Facchetti and Hersam, {Mark C} and Marks, {Tobin J}",
year = "2015",
month = "12",
day = "9",
doi = "10.1021/acsami.5b07744",
language = "English",
volume = "7",
pages = "26360--26366",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "48",

}

TY - JOUR

T1 - Solution-processed self-assembled nanodielectrics on template-stripped metal substrates

AU - McMorrow, Julian J.

AU - Walker, Amanda R.

AU - Sangwan, Vinod K.

AU - Jariwala, Deep

AU - Hoffman, Emily

AU - Everaerts, Ken

AU - Facchetti, Antonio

AU - Hersam, Mark C

AU - Marks, Tobin J

PY - 2015/12/9

Y1 - 2015/12/9

N2 - The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness -2, leakage current -2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

AB - The coupling of hybrid organic-inorganic gate dielectrics with emergent unconventional semiconductors has yielded transistor devices exhibiting record-setting transport properties. However, extensive electronic transport measurements on these high-capacitance systems are often convoluted with the electronic response of the semiconducting silicon substrate. In this report, we demonstrate the growth of solution-processed zirconia self-assembled nanodielectrics (Zr-SAND) on template-stripped aluminum substrates. The resulting Zr-SAND on Al structures leverage the ultrasmooth (r.m.s. roughness -2, leakage current -2 at -2 MV cm-1) and multilayer growth of Zr-SAND on Si, while exhibiting superior temperature and voltage capacitance responses. These results are important to conduct detailed transport measurements in emergent transistor technologies featuring SAND as well as for future applications in integrated circuits or flexible electronics.

KW - capacitor

KW - nanodielectric

KW - self-assembly

KW - template strip

KW - unconventional electronics

UR - http://www.scopus.com/inward/record.url?scp=84949655727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949655727&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b07744

DO - 10.1021/acsami.5b07744

M3 - Article

AN - SCOPUS:84949655727

VL - 7

SP - 26360

EP - 26366

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 48

ER -