Solvational barriers to interfacial electron transfer

Minimization via valence delocalization

Joseph T Hupp, Xiao Lian Zhang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Standard rate constants (ks) for interfacial electron transfer (ET) have been obtained for several redox couples featuring very small internal activation barriers. To render these ordinarily fast rates more easily measurable, we have employed low-defect-density, highly ordered pyrolytic graphite (HOPG) as an electrode material (see: Allred and McCreery, Anal. Chem. 1992, 64, 444). At the HOPG/aqueous solution interface, we observe the systematic (exponential) increase of ks with inverse reactant size predicted by Marcus for electrochemical reactions whose barriers are primarily defined by solvent reorganizational effects. We also observe that rates can be significantly accelerated by delocalizing electrons over multiple metal-centered trapping sites. The degree of rate acceleration is quantitatively consistent with the extent of solvent barrier lowering expected if electronic delocalization effectively increases the radius of the ET reaction site.

Original languageEnglish
Pages (from-to)853-855
Number of pages3
JournalJournal of Physical Chemistry
Volume99
Issue number3
Publication statusPublished - 1995

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electron transfer
Graphite
valence
optimization
Electrons
pyrolytic graphite
Defect density
Rate constants
electrode materials
Metals
Chemical activation
Electrodes
trapping
activation
aqueous solutions
radii
defects
electronics
metals
electrons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Solvational barriers to interfacial electron transfer : Minimization via valence delocalization. / Hupp, Joseph T; Zhang, Xiao Lian.

In: Journal of Physical Chemistry, Vol. 99, No. 3, 1995, p. 853-855.

Research output: Contribution to journalArticle

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