Some properties of plasma-grown GaAs oxides

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A review of the present understanding of plasma-grown GaAs oxides is presented. In particular we discuss the results for oxides grown in a magnetically confined low temperature and low pressure oxygen plasma. From measurements (using electron, ion and photon beams) on these oxides an attempt is made to correlate the various physical properties with the electrical properties of these films. It is shown that the as-grown oxides with proper post-growth annealing treatments can have a fixed charge density of about 5 × 1011 cm-2 with a breakdown voltage of not greater than about |±106 V cm-1|. To improve the electrical properties of these oxides an overlay of thin aluminum oxide films is used to form double-layered oxides. Metal-oxide-semiconductor structures made with the double oxides show marked improvements in their electrical characteristics.

Original languageEnglish
Pages (from-to)89-106
Number of pages18
JournalThin Solid Films
Volume56
Issue number1-2
DOIs
Publication statusPublished - 1979

Fingerprint

Oxides
Plasmas
oxides
Electric properties
electrical properties
Aluminum Oxide
photon beams
oxygen plasma
gallium arsenide
Charge density
Electric breakdown
electrical faults
metal oxide semiconductors
Oxide films
oxide films
Photons
low pressure
aluminum oxides
Physical properties
physical properties

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Some properties of plasma-grown GaAs oxides. / Chang, Robert P. H.

In: Thin Solid Films, Vol. 56, No. 1-2, 1979, p. 89-106.

Research output: Contribution to journalArticle

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