Spectral tuning of plasmon-enhanced silicon quantum dot luminescence

Julie S. Biteen, Nathan S Lewis, Harry A. Atwater, Hans Mertens, Albert Polman

Research output: Contribution to journalArticle

180 Citations (Scopus)

Abstract

In the presence of nanoscale silver island arrays, silicon quantum dots exhibit up to sevenfold luminescence enhancements at emission frequencies that correspond to the collective dipole plasmon resonance frequency of the Ag island array. Using electron-beam lithography to alter the pitch and particle diameter, this wavelength-selective enhancement can be varied as the metal array resonance wavelength is tuned from 600 to 900 nm. The luminescence intensity enhancement upon coupling is attributed to an increase in the radiative decay rate of the silicon quantum dots.

Original languageEnglish
Article number131109
JournalApplied Physics Letters
Volume88
Issue number13
DOIs
Publication statusPublished - 2006

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tuning
quantum dots
luminescence
augmentation
silicon
wavelengths
decay rates
lithography
silver
electron beams
dipoles
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Spectral tuning of plasmon-enhanced silicon quantum dot luminescence. / Biteen, Julie S.; Lewis, Nathan S; Atwater, Harry A.; Mertens, Hans; Polman, Albert.

In: Applied Physics Letters, Vol. 88, No. 13, 131109, 2006.

Research output: Contribution to journalArticle

Biteen, Julie S. ; Lewis, Nathan S ; Atwater, Harry A. ; Mertens, Hans ; Polman, Albert. / Spectral tuning of plasmon-enhanced silicon quantum dot luminescence. In: Applied Physics Letters. 2006 ; Vol. 88, No. 13.
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