Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi; A. Continenza; A. J. Freeman

doi:10.1063/1.1608469

Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi, A. Continenza, A. J. Freeman

Northwestern University

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

Properties such as potential discontinuity and half-metallic behavior were determined for Co₂MnGe/GaAs and Co₂MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co₂MnGe were investigated.

Original language	English
Pages (from-to)	4723-4725
Number of pages	3
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1608469
Publication status	Published - Oct 1 2003

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Picozzi, S., Continenza, A., & Freeman, A. J. (2003). Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity. Journal of Applied Physics, 94(7), 4723-4725. https://doi.org/10.1063/1.1608469

@article{7412d77afc1a4b35958a60dfa522ac79,

title = "Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity",

abstract = "Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.",

author = "S. Picozzi and A. Continenza and Freeman, {A. J.}",

year = "2003",

month = oct

day = "1",

doi = "10.1063/1.1608469",

language = "English",

volume = "94",

pages = "4723--4725",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Spin injection at heusler/semiconductor interfaces

T2 - First-principles determination of potential discontinuity and half-metallicity

AU - Picozzi, S.

AU - Continenza, A.

AU - Freeman, A. J.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

AB - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

UR - http://www.scopus.com/inward/record.url?scp=0142025559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142025559&partnerID=8YFLogxK

U2 - 10.1063/1.1608469

DO - 10.1063/1.1608469

M3 - Article

AN - SCOPUS:0142025559

VL - 94

SP - 4723

EP - 4725

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -

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10.1063/1.1608469