Abstract
Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.
Original language | English |
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Pages (from-to) | 4723-4725 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 7 |
DOIs | |
Publication status | Published - Oct 1 2003 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Spin injection at heusler/semiconductor interfaces : First-principles determination of potential discontinuity and half-metallicity. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.
In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4723-4725.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spin injection at heusler/semiconductor interfaces
T2 - First-principles determination of potential discontinuity and half-metallicity
AU - Picozzi, S.
AU - Continenza, A.
AU - Freeman, Arthur J
PY - 2003/10/1
Y1 - 2003/10/1
N2 - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.
AB - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.
UR - http://www.scopus.com/inward/record.url?scp=0142025559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0142025559&partnerID=8YFLogxK
U2 - 10.1063/1.1608469
DO - 10.1063/1.1608469
M3 - Article
AN - SCOPUS:0142025559
VL - 94
SP - 4723
EP - 4725
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -