Spin injection at heusler/semiconductor interfaces

First-principles determination of potential discontinuity and half-metallicity

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

Original languageEnglish
Pages (from-to)4723-4725
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
Publication statusPublished - Oct 1 2003

Fingerprint

metallicity
discontinuity
injection

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Spin injection at heusler/semiconductor interfaces : First-principles determination of potential discontinuity and half-metallicity. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4723-4725.

Research output: Contribution to journalArticle

@article{7412d77afc1a4b35958a60dfa522ac79,
title = "Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity",
abstract = "Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.",
author = "S. Picozzi and A. Continenza and Freeman, {Arthur J}",
year = "2003",
month = "10",
day = "1",
doi = "10.1063/1.1608469",
language = "English",
volume = "94",
pages = "4723--4725",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Spin injection at heusler/semiconductor interfaces

T2 - First-principles determination of potential discontinuity and half-metallicity

AU - Picozzi, S.

AU - Continenza, A.

AU - Freeman, Arthur J

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

AB - Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

UR - http://www.scopus.com/inward/record.url?scp=0142025559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142025559&partnerID=8YFLogxK

U2 - 10.1063/1.1608469

DO - 10.1063/1.1608469

M3 - Article

VL - 94

SP - 4723

EP - 4725

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -