Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journal › Article

56 Citations (Scopus)

Abstract

Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.

Original languageEnglish
Pages (from-to)4723-4725
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
Publication statusPublished - Oct 1 2003

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metallicity
discontinuity
injection

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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Spin injection at heusler/semiconductor interfaces : First-principles determination of potential discontinuity and half-metallicity. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4723-4725.

Research output: Contribution to journal › Article

Picozzi, S, Continenza, A & Freeman, AJ 2003, 'Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity', Journal of Applied Physics, vol. 94, no. 7, pp. 4723-4725. https://doi.org/10.1063/1.1608469
Picozzi S, Continenza A, Freeman AJ. Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity. Journal of Applied Physics. 2003 Oct 1;94(7):4723-4725. https://doi.org/10.1063/1.1608469
Picozzi, S. ; Continenza, A. ; Freeman, Arthur J. / Spin injection at heusler/semiconductor interfaces : First-principles determination of potential discontinuity and half-metallicity. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 7. pp. 4723-4725.
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