Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi; A. Continenza; A. J. Freeman

doi:10.1063/1.1608469

Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

S. Picozzi, A. Continenza, A. J. Freeman

Northwestern University

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

Properties such as potential discontinuity and half-metallic behavior were determined for Co₂MnGe/GaAs and Co₂MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co₂MnGe were investigated.

Original language	English
Pages (from-to)	4723-4725
Number of pages	3
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1608469
Publication status	Published - Oct 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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Picozzi, S., Continenza, A., & Freeman, A. J. (2003). Spin injection at heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity. Journal of Applied Physics, 94(7), 4723-4725. https://doi.org/10.1063/1.1608469

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abstract = "Properties such as potential discontinuity and half-metallic behavior were determined for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appeared in both sides of the junctions, so that half-metallicity was lost. The effects of possible Co-Mn antisites in bulk Co2MnGe were investigated.",

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