Spray-combustion synthesis

Efficient solution route to high-performance oxide transistors

Xinge Yu, Jeremy Smith, Nanjia Zhou, Li Zeng, Peijun Guo, Yu Xia, Ana Alvarez, Stefano Aghion, Hui Lin, Junsheng Yu, Robert P. H. Chang, Michael J. Bedzyk, Rafael Ferragut, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Original languageEnglish
Pages (from-to)3217-3222
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume112
Issue number11
DOIs
Publication statusPublished - Mar 17 2015

Fingerprint

Combustion synthesis
Oxides
Transistors
Metals
Electronic equipment
Densification
Zinc Oxide
Flat panel displays
Gallium
Indium
Photovoltaic cells
Electron mobility
Carrier mobility
Transparency
Oxide films
Sol-gels
Condensation
Nanostructures
Irradiation
Fabrication

Keywords

  • Combustion synthesis
  • Low-temperature growth
  • Oxide film
  • Oxide transistor
  • Transistor

ASJC Scopus subject areas

  • General

Cite this

Spray-combustion synthesis : Efficient solution route to high-performance oxide transistors. / Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P. H.; Bedzyk, Michael J.; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 112, No. 11, 17.03.2015, p. 3217-3222.

Research output: Contribution to journalArticle

Yu, X, Smith, J, Zhou, N, Zeng, L, Guo, P, Xia, Y, Alvarez, A, Aghion, S, Lin, H, Yu, J, Chang, RPH, Bedzyk, MJ, Ferragut, R, Marks, TJ & Facchetti, A 2015, 'Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors', Proceedings of the National Academy of Sciences of the United States of America, vol. 112, no. 11, pp. 3217-3222. https://doi.org/10.1073/pnas.1501548112
Yu, Xinge ; Smith, Jeremy ; Zhou, Nanjia ; Zeng, Li ; Guo, Peijun ; Xia, Yu ; Alvarez, Ana ; Aghion, Stefano ; Lin, Hui ; Yu, Junsheng ; Chang, Robert P. H. ; Bedzyk, Michael J. ; Ferragut, Rafael ; Marks, Tobin J ; Facchetti, Antonio. / Spray-combustion synthesis : Efficient solution route to high-performance oxide transistors. In: Proceedings of the National Academy of Sciences of the United States of America. 2015 ; Vol. 112, No. 11. pp. 3217-3222.
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