Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO

B. V. Vuchic, K. L. Merkle, K. A. Dean, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

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Abstract

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

Original languageEnglish
Pages (from-to)2591-2594
Number of pages4
JournalJournal of Applied Physics
Volume77
Issue number6
DOIs
Publication statusPublished - 1995

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Vuchic, B. V., Merkle, K. L., Dean, K. A., Buchholz, D. B., Chang, R. P. H., & Marks, L. D. (1995). Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO. Journal of Applied Physics, 77(6), 2591-2594. https://doi.org/10.1063/1.358721