Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO

B. V. Vuchic, K. L. Merkle, K. A. Dean, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

Research output: Contribution to journalArticle

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Abstract

A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

Original languageEnglish
Pages (from-to)2591-2594
Number of pages4
JournalJournal of Applied Physics
Volume77
Issue number6
DOIs
Publication statusPublished - 1995

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grain boundaries
thin films
low voltage
epitaxy
argon
electric potential
configurations
ions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Vuchic, B. V., Merkle, K. L., Dean, K. A., Buchholz, D. B., Chang, R. P. H., & Marks, L. D. (1995). Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO. Journal of Applied Physics, 77(6), 2591-2594. https://doi.org/10.1063/1.358721

Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO. / Vuchic, B. V.; Merkle, K. L.; Dean, K. A.; Buchholz, D. B.; Chang, Robert P. H.; Marks, L. D.

In: Journal of Applied Physics, Vol. 77, No. 6, 1995, p. 2591-2594.

Research output: Contribution to journalArticle

Vuchic, BV, Merkle, KL, Dean, KA, Buchholz, DB, Chang, RPH & Marks, LD 1995, 'Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO', Journal of Applied Physics, vol. 77, no. 6, pp. 2591-2594. https://doi.org/10.1063/1.358721
Vuchic, B. V. ; Merkle, K. L. ; Dean, K. A. ; Buchholz, D. B. ; Chang, Robert P. H. ; Marks, L. D. / Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO. In: Journal of Applied Physics. 1995 ; Vol. 77, No. 6. pp. 2591-2594.
@article{2deb795160ac4e1495ed6473c68c0fbe,
title = "Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO",
abstract = "A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.",
author = "Vuchic, {B. V.} and Merkle, {K. L.} and Dean, {K. A.} and Buchholz, {D. B.} and Chang, {Robert P. H.} and Marks, {L. D.}",
year = "1995",
doi = "10.1063/1.358721",
language = "English",
volume = "77",
pages = "2591--2594",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Sputter-induced grain boundary junctions in YBa2Cu 3O7-x thin films on MgO

AU - Vuchic, B. V.

AU - Merkle, K. L.

AU - Dean, K. A.

AU - Buchholz, D. B.

AU - Chang, Robert P. H.

AU - Marks, L. D.

PY - 1995

Y1 - 1995

N2 - A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

AB - A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7-x thin films on MgO. The YBa2Cu3O7-x thin film grown on a pre-sputtered region of MgO was rotated 45°about the [001 axis relative to the YBa 2Cu3O7-x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O 7-x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45°grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.

UR - http://www.scopus.com/inward/record.url?scp=21544440854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544440854&partnerID=8YFLogxK

U2 - 10.1063/1.358721

DO - 10.1063/1.358721

M3 - Article

AN - SCOPUS:21544440854

VL - 77

SP - 2591

EP - 2594

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -