Stability and electronic properties of InAs/InP strained superlattices

A. Continenza, S. Massidda, Arthur J Freeman

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Results of all-electron full-potential local-density electronic-structure calculations on strained 1×1 (001) superlattices are presented. The in-plane lattice parameter and the anion-cation equilibrium distances are determined with use of the total-energy for lattice parameters to simulate (i) the case in which the InAs/InP system is considered to be grown in the free-standing mode and (ii) the case in which InAs is considered to be grown on an InP substrate. In both cases, the instability of the two superlattices to disproportionation is found to be rather small and mainly due to the deformation energy. Only a small amount of charge is transferred at the interface and the energy term related to this charge transfer tends to stabilize the structure. Studies on the effects of strain on the electronic properties (band gap and effective valence-band masses) of the superlattices show that the uniaxial distortion affects the shape and the relative position of the valence bands so that the transport properties might be adjusted by properly varying the strain.

Original languageEnglish
Pages (from-to)12013-12020
Number of pages8
JournalPhysical Review B
Volume41
Issue number17
DOIs
Publication statusPublished - 1990

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Superlattices
Electronic properties
superlattices
Valence bands
Lattice constants
lattice parameters
electronics
valence
Electron transport properties
Electronic structure
Anions
energy
Cations
Charge transfer
Energy gap
Negative ions
transport properties
Positive ions
charge transfer
electronic structure

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Stability and electronic properties of InAs/InP strained superlattices. / Continenza, A.; Massidda, S.; Freeman, Arthur J.

In: Physical Review B, Vol. 41, No. 17, 1990, p. 12013-12020.

Research output: Contribution to journalArticle

Continenza, A. ; Massidda, S. ; Freeman, Arthur J. / Stability and electronic properties of InAs/InP strained superlattices. In: Physical Review B. 1990 ; Vol. 41, No. 17. pp. 12013-12020.
@article{9ec3dc7e18f44ed2b19f9bf65a761c3b,
title = "Stability and electronic properties of InAs/InP strained superlattices",
abstract = "Results of all-electron full-potential local-density electronic-structure calculations on strained 1×1 (001) superlattices are presented. The in-plane lattice parameter and the anion-cation equilibrium distances are determined with use of the total-energy for lattice parameters to simulate (i) the case in which the InAs/InP system is considered to be grown in the free-standing mode and (ii) the case in which InAs is considered to be grown on an InP substrate. In both cases, the instability of the two superlattices to disproportionation is found to be rather small and mainly due to the deformation energy. Only a small amount of charge is transferred at the interface and the energy term related to this charge transfer tends to stabilize the structure. Studies on the effects of strain on the electronic properties (band gap and effective valence-band masses) of the superlattices show that the uniaxial distortion affects the shape and the relative position of the valence bands so that the transport properties might be adjusted by properly varying the strain.",
author = "A. Continenza and S. Massidda and Freeman, {Arthur J}",
year = "1990",
doi = "10.1103/PhysRevB.41.12013",
language = "English",
volume = "41",
pages = "12013--12020",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "17",

}

TY - JOUR

T1 - Stability and electronic properties of InAs/InP strained superlattices

AU - Continenza, A.

AU - Massidda, S.

AU - Freeman, Arthur J

PY - 1990

Y1 - 1990

N2 - Results of all-electron full-potential local-density electronic-structure calculations on strained 1×1 (001) superlattices are presented. The in-plane lattice parameter and the anion-cation equilibrium distances are determined with use of the total-energy for lattice parameters to simulate (i) the case in which the InAs/InP system is considered to be grown in the free-standing mode and (ii) the case in which InAs is considered to be grown on an InP substrate. In both cases, the instability of the two superlattices to disproportionation is found to be rather small and mainly due to the deformation energy. Only a small amount of charge is transferred at the interface and the energy term related to this charge transfer tends to stabilize the structure. Studies on the effects of strain on the electronic properties (band gap and effective valence-band masses) of the superlattices show that the uniaxial distortion affects the shape and the relative position of the valence bands so that the transport properties might be adjusted by properly varying the strain.

AB - Results of all-electron full-potential local-density electronic-structure calculations on strained 1×1 (001) superlattices are presented. The in-plane lattice parameter and the anion-cation equilibrium distances are determined with use of the total-energy for lattice parameters to simulate (i) the case in which the InAs/InP system is considered to be grown in the free-standing mode and (ii) the case in which InAs is considered to be grown on an InP substrate. In both cases, the instability of the two superlattices to disproportionation is found to be rather small and mainly due to the deformation energy. Only a small amount of charge is transferred at the interface and the energy term related to this charge transfer tends to stabilize the structure. Studies on the effects of strain on the electronic properties (band gap and effective valence-band masses) of the superlattices show that the uniaxial distortion affects the shape and the relative position of the valence bands so that the transport properties might be adjusted by properly varying the strain.

UR - http://www.scopus.com/inward/record.url?scp=35949009302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35949009302&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.41.12013

DO - 10.1103/PhysRevB.41.12013

M3 - Article

VL - 41

SP - 12013

EP - 12020

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 17

ER -