Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick; Leonard C Feldman; I. K. Robinson

doi:10.1063/1.101869

Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick, Leonard C Feldman, I. K. Robinson

Rutgers University

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)^1/2×(3) ^1/2 and Ga(3)^1/2×(3)^1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

Original language	English
Pages (from-to)	442-444
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	5
DOIs	https://doi.org/10.1063/1.101869
Publication status	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ff8a43e62f124209b9c2ae99922a79b1,

title = "Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon",

abstract = "We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.",

author = "Headrick, {R. L.} and Feldman, {Leonard C} and Robinson, {I. K.}",

year = "1989",

doi = "10.1063/1.101869",

language = "English",

volume = "55",

pages = "442--444",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

AU - Headrick, R. L.

AU - Feldman, Leonard C

AU - Robinson, I. K.

PY - 1989

Y1 - 1989

N2 - We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

AB - We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=2842539411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2842539411&partnerID=8YFLogxK

U2 - 10.1063/1.101869

DO - 10.1063/1.101869

M3 - Article

AN - SCOPUS:2842539411

VL - 55

SP - 442

EP - 444

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

Abstract

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