Abstract
We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.
| Original language | English |
|---|---|
| Pages (from-to) | 442-444 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 55 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1989 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Headrick, R. L., Feldman, L. C., & Robinson, I. K. (1989). Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon. Applied Physics Letters, 55(5), 442-444. https://doi.org/10.1063/1.101869