Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick, Leonard C Feldman, I. K. Robinson

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Abstract

We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

Original languageEnglish
Pages (from-to)442-444
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number5
DOIs
Publication statusPublished - 1989

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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