Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick, Leonard C Feldman, I. K. Robinson

Research output: Contribution to journalArticle

46 Citations (Scopus)


We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

Original languageEnglish
Pages (from-to)442-444
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1989


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this