Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick; Leonard C Feldman; I. K. Robinson

doi:10.1063/1.101869

Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick, Leonard C Feldman, I. K. Robinson

Rutgers University

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)^1/2×(3) ^1/2 and Ga(3)^1/2×(3)^1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.

Original language	English
Pages (from-to)	442-444
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	5
DOIs	https://doi.org/10.1063/1.101869
Publication status	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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