Abstract
We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.
| Original language | English |
|---|---|
| Pages (from-to) | 442-444 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 55 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1989 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon. / Headrick, R. L.; Feldman, Leonard C; Robinson, I. K.
In: Applied Physics Letters, Vol. 55, No. 5, 1989, p. 442-444.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon
AU - Headrick, R. L.
AU - Feldman, Leonard C
AU - Robinson, I. K.
PY - 1989
Y1 - 1989
N2 - We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.
AB - We have undertaken a new set of experiments to investigate the behavior of adsorbed-impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3) 1/2 and Ga(3)1/2×(3)1/2 two-dimensional structures at the interface between Si(111) and a-Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.
UR - http://www.scopus.com/inward/record.url?scp=2842539411&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2842539411&partnerID=8YFLogxK
U2 - 10.1063/1.101869
DO - 10.1063/1.101869
M3 - Article
AN - SCOPUS:2842539411
VL - 55
SP - 442
EP - 444
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
ER -