Abstract
In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.
Original language | English |
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Pages (from-to) | 4051-4053 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 24 |
DOIs | |
Publication status | Published - Dec 10 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)