Stability of HF-etched Si(100) surfaces in oxygen ambient

X. Zhang, E. Garfunkel, Y. J. Chabal, S. B. Christman, E. E. Chaban

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Abstract

In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.

Original languageEnglish
Pages (from-to)4051-4053
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - Dec 10 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhang, X., Garfunkel, E., Chabal, Y. J., Christman, S. B., & Chaban, E. E. (2001). Stability of HF-etched Si(100) surfaces in oxygen ambient. Applied Physics Letters, 79(24), 4051-4053. https://doi.org/10.1063/1.1425461