Abstract
In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.
| Original language | English |
|---|---|
| Pages (from-to) | 4051-4053 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - Dec 10 2001 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Stability of HF-etched Si(100) surfaces in oxygen ambient. / Zhang, X.; Garfunkel, Eric; Chabal, Y. J.; Christman, S. B.; Chaban, E. E.
In: Applied Physics Letters, Vol. 79, No. 24, 10.12.2001, p. 4051-4053.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Stability of HF-etched Si(100) surfaces in oxygen ambient
AU - Zhang, X.
AU - Garfunkel, Eric
AU - Chabal, Y. J.
AU - Christman, S. B.
AU - Chaban, E. E.
PY - 2001/12/10
Y1 - 2001/12/10
N2 - In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.
AB - In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.
UR - http://www.scopus.com/inward/record.url?scp=0035842813&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035842813&partnerID=8YFLogxK
U2 - 10.1063/1.1425461
DO - 10.1063/1.1425461
M3 - Article
VL - 79
SP - 4051
EP - 4053
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
ER -