Stability of HF-etched Si(100) surfaces in oxygen ambient

X. Zhang; E. Garfunkel; Y. J. Chabal; S. B. Christman; E. E. Chaban

doi:10.1063/1.1425461

Stability of HF-etched Si(100) surfaces in oxygen ambient

X. Zhang, E. Garfunkel, Y. J. Chabal, S. B. Christman, E. E. Chaban

Rutgers University

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O₂ pressures. The kinetics of the O₂ insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O₂ to access Si-Si backbonds.

Original language	English
Pages (from-to)	4051-4053
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	24
DOIs	https://doi.org/10.1063/1.1425461
Publication status	Published - Dec 10 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.",

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AU - Garfunkel, E.

AU - Chabal, Y. J.

AU - Christman, S. B.

AU - Chaban, E. E.

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AB - In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.

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