Stability of HF-etched Si(100) surfaces in oxygen ambient

X. Zhang, Eric Garfunkel, Y. J. Chabal, S. B. Christman, E. E. Chaban

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.

Original languageEnglish
Pages (from-to)4051-4053
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number24
DOIs
Publication statusPublished - Dec 10 2001

Fingerprint

oxygen
infrared absorption
insertion
absorption spectroscopy
infrared spectroscopy
activation energy
kinetics
silicon
hydrogen
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhang, X., Garfunkel, E., Chabal, Y. J., Christman, S. B., & Chaban, E. E. (2001). Stability of HF-etched Si(100) surfaces in oxygen ambient. Applied Physics Letters, 79(24), 4051-4053. https://doi.org/10.1063/1.1425461

Stability of HF-etched Si(100) surfaces in oxygen ambient. / Zhang, X.; Garfunkel, Eric; Chabal, Y. J.; Christman, S. B.; Chaban, E. E.

In: Applied Physics Letters, Vol. 79, No. 24, 10.12.2001, p. 4051-4053.

Research output: Contribution to journalArticle

Zhang, X, Garfunkel, E, Chabal, YJ, Christman, SB & Chaban, EE 2001, 'Stability of HF-etched Si(100) surfaces in oxygen ambient', Applied Physics Letters, vol. 79, no. 24, pp. 4051-4053. https://doi.org/10.1063/1.1425461
Zhang, X. ; Garfunkel, Eric ; Chabal, Y. J. ; Christman, S. B. ; Chaban, E. E. / Stability of HF-etched Si(100) surfaces in oxygen ambient. In: Applied Physics Letters. 2001 ; Vol. 79, No. 24. pp. 4051-4053.
@article{f8931a4c69b94eab93cf1d6f09ef5af8,
title = "Stability of HF-etched Si(100) surfaces in oxygen ambient",
abstract = "In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.",
author = "X. Zhang and Eric Garfunkel and Chabal, {Y. J.} and Christman, {S. B.} and Chaban, {E. E.}",
year = "2001",
month = "12",
day = "10",
doi = "10.1063/1.1425461",
language = "English",
volume = "79",
pages = "4051--4053",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Stability of HF-etched Si(100) surfaces in oxygen ambient

AU - Zhang, X.

AU - Garfunkel, Eric

AU - Chabal, Y. J.

AU - Christman, S. B.

AU - Chaban, E. E.

PY - 2001/12/10

Y1 - 2001/12/10

N2 - In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.

AB - In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550-590 K for 1-20 mTorr O2 pressures. The kinetics of the O2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O2 to access Si-Si backbonds.

UR - http://www.scopus.com/inward/record.url?scp=0035842813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035842813&partnerID=8YFLogxK

U2 - 10.1063/1.1425461

DO - 10.1063/1.1425461

M3 - Article

AN - SCOPUS:0035842813

VL - 79

SP - 4051

EP - 4053

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -