Stabilization of β-SiB3 from liquid Ga

A boron-rich binary semiconductor resistant to high-temperature air oxidation

James R. Salvador, Daniel Bilc, S. D. Mahanti, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Unlike the original form of SiB3, which has a huge compositional spread in its Si/B ratio and a crystal structure with Si atoms randomly distributed over all its B12 cages, the new form of SiB3 (β form; see structure) is stoichiometrically and crystallographically ordered. The clear segregation of Si and B atoms in the new form is believed to be responsible for its enhanced oxidation resistance observed at high temperatures.

Original languageEnglish
Pages (from-to)1929-1932
Number of pages4
JournalAngewandte Chemie - International Edition
Volume42
Issue number17
DOIs
Publication statusPublished - Apr 29 2003

Fingerprint

Boron
Stabilization
Semiconductor materials
Atoms
Oxidation
Oxidation resistance
Liquids
Air
Crystal structure
Temperature

Keywords

  • Boron
  • Gallium
  • Semiconductors
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Stabilization of β-SiB3 from liquid Ga : A boron-rich binary semiconductor resistant to high-temperature air oxidation. / Salvador, James R.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G.

In: Angewandte Chemie - International Edition, Vol. 42, No. 17, 29.04.2003, p. 1929-1932.

Research output: Contribution to journalArticle

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